IRFSL7530PBF

Single FETs, MOSFETs Overview

The IRFSL7530PBF is a single N-channel StrongIRFET power MOSFET in a TO-262 (I2PAK) lead-free package. It features a maximum drain-source voltage of 60V and a continuous drain current of 195A at 25°C, limited by the package. The device offers a typical on-resistance of 1.65mΩ with a maximum of 2.00mΩ at VGS=10V. Key electrical parameters include a total gate charge of 274nC to 411nC, a forward transconductance of 242S, and a junction-to-case thermal resistance of 0.40°C/W. It supports an operating junction temperature range from -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• StrongIRFET technology provides improved gate, avalanche, and dynamic dV/dt ruggedness.
• Enhanced body diode capabilities for high dv/dt and di/dt performance.
• Fully characterized capacitance and avalanche safe operating area (SOA).
• Lead-free construction compliant with RoHS standards.

Single FETs, MOSFETs Applications

• Brushed motor drive applications
• BLDC motor drive applications
• Battery powered circuits
• Half-bridge and full-bridge topologies
• Synchronous rectifier applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact package type and packaging format. Ensure that the component meets all applicable environmental compliance requirements, such as RoHS, before finalizing procurement specifications. Cross-reference the part number with the latest datasheet revision history to confirm technical accuracy.

Single FETs, MOSFETs Selection Notes

Select this component based on its 60V rating and 195A package-limited current capability. Evaluate the 1.65mΩ typical on-resistance for conduction loss calculations. Consider the 0.40°C/W thermal resistance for heatsinking requirements. Verify compatibility with the intended switching frequency regarding gate charge characteristics.

Single FETs, MOSFETs Part Context

This component belongs to the Infineon StrongIRFET family, designed for high-current, low-voltage power switching applications. It utilizes advanced silicon planar technology to achieve low on-resistance while maintaining robust avalanche performance. The TO-262 package facilitates through-hole mounting for high-power dissipation scenarios.

Single FETs, MOSFETs Replacement Considerations

Consult the manufacturer's cross-reference tools or official substitution guides to identify compatible alternatives. Verify that any substitute matches the 60V rating, 195A current limit, and TO-262 package dimensions. Confirm equivalent thermal and electrical characteristics before implementation.

Single FETs, MOSFETs FAQ

What limits the continuous drain current of the IRFSL7530PBF?

The continuous drain current is limited to 195A by the package and wire bonding technology, despite the silicon being capable of handling up to 295A.

Is the IRFSL7530PBF suitable for synchronous rectifier applications?

Yes, the datasheet explicitly lists synchronous rectifier applications as a primary use case for this device.