IRFU3711ZPBF

Description：MOSFET N-CH 20V 93A IPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:a6a3940e575e Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRFU3711ZPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 20V 93A IPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFU3711ZPBF

Description：MOSFET N-CH 20V 93A IPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：93A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5.7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：27 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2160 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：79W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：IPAK (TO-251AA)
Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA

Single FETs, MOSFETs datasheet and documents for IRFU3711ZPBF

IRFU3711ZPBF

Single FETs, MOSFETs Overview

The IRFU3711ZPBF is a lead-free HEXFET power MOSFET manufactured by Infineon Technologies. It features an I-Pak (TO-251) package and utilizes advanced silicon processing to achieve ultra-low on-resistance. The device is rated for a drain-to-source voltage of 20V, with a maximum continuous drain current of 93A at 25°C case temperature. Key electrical parameters include a static RDS(on) of 5.7mΩ at VGS=4.5V, a total gate charge of 18nC, and a forward transconductance of 48S. It supports a junction temperature range from -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

Advanced process technology enabling extremely low on-resistance per silicon area
Fully characterized avalanche voltage and current ratings for robust operation
Ultra-low gate impedance facilitating fast switching speeds
Lead-free construction compliant with environmental standards

Single FETs, MOSFETs Applications

High frequency synchronous buck converters for computer processor power
High frequency isolated DC-DC converters with synchronous rectification for telecom
High frequency isolated DC-DC converters with synchronous rectification for industrial use

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'PbF' indicates lead-free compliance as documented in the datasheet. Confirm the package type corresponds to the I-Pak (TO-251) outline provided in the official documentation. Ensure the component meets the required thermal resistance characteristics for your specific PCB mount configuration.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high efficiency in low-voltage, high-current environments. The low gate charge minimizes drive losses, while the low RDS(on) reduces conduction losses. Consider the thermal resistance values when designing heat dissipation strategies for the I-Pak package.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It is designed specifically for high-frequency switching applications where minimizing power loss is critical. The I-Pak package offers a compact form factor suitable for surface-mount assembly on printed circuit boards.