IRFU430BTU

$0.28

Description：N-CHANNEL POWER MOSFET
Series：-
Mfr：Fairchild Semiconductor
Package：Bulk

SKU:6f682cef7ed0 Category: Single FETs, MOSFETs Brand: Fairchild Semiconductor

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Product introduction

IRFU430BTU is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is N-CHANNEL POWER MOSFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFU430BTU

Description：N-CHANNEL POWER MOSFET
Series：-
Mfr：Fairchild Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：500 V
Current - Continuous Drain (Id) @ 25°C：3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.5Ohm @ 1.75A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：33 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：1050 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：IPAK
Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA

Single FETs, MOSFETs datasheet and documents for IRFU430BTU

IRFU430BTU

Single FETs, MOSFETs Overview

The IRFU430BTU is an N-Channel Power MOSFET manufactured by Fairchild Semiconductor. It features a drain-source breakdown voltage of 500V and a continuous drain current capability of 3.5A at case temperature. The device exhibits a maximum on-resistance of 1.5Ω. Designed for through-hole mounting in the IPAK package, it operates within a junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

N-Channel silicon metal-oxide semiconductor construction
Robust 500V power management capability
Through-hole IPAK package design

Single FETs, MOSFETs Applications

Switching applications
Power supply circuits
Motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific manufacturer source, as Fairchild Semiconductor assets are now managed by ON Semiconductor. Confirm the exact datasheet revision and electrical parameters against the current official documentation. Ensure the component matches the required IPAK through-hole package specification and temperature ratings for your design.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a 500V rated N-Channel MOSFET with moderate current handling. The IPAK through-hole package suits prototyping or applications where surface-mount options are unsuitable. Verify thermal management requirements given the 2.5W dissipation rating at ambient temperature.

Single FETs, MOSFETs Part Context

This part belongs to the B-FET series of power MOSFETs from Fairchild Semiconductor. It serves as a discrete switching element in power electronics. The IRFU430BTU variant specifically utilizes the IPAK through-hole package, distinguishing it from surface-mount equivalents like the DPAK versions in the same voltage class.