IRFU4620PBF

Description：MOSFET N-CH 200V 24A IPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:c4223ae48492 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRFU4620PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 200V 24A IPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFU4620PBF

Description：MOSFET N-CH 200V 24A IPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：78mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs：38 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1710 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：144W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：IPAK (TO-251AA)
Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA

Single FETs, MOSFETs datasheet and documents for IRFU4620PBF

IRFU4620PBF

Single FETs, MOSFETs Overview

The IRFU4620PBF is a single N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It utilizes an I-Pak (TO-251) surface-mount package and operates with a drain-source voltage of 200V. The device supports a continuous drain current of 24A at a case temperature of 25°C, with a maximum power dissipation of 144W. Key electrical parameters include a typical on-resistance of 64mΩ and a maximum of 78mΩ at VGS=10V. The total gate charge is typically 25nC, and the junction-to-case thermal resistance is 1.045°C/W.

Single FETs, MOSFETs Feature Summary

Improved gate, avalanche, and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche safe operating area
Enhanced body diode dV/dt and dI/dt capability

Single FETs, MOSFETs Applications

High efficiency synchronous rectification in SMPS
Uninterruptible power supply systems
High speed power switching applications
Hard switched and high frequency circuits

Single FETs, MOSFETs Procurement Notes

Verify that the ordering suffix matches the specific package type required for your design. Confirm the component meets RoHS compliance standards and industrial qualification levels before integration. Ensure proper handling procedures are followed to prevent electrostatic discharge damage during assembly and storage.

Single FETs, MOSFETs Selection Notes

Select this component when a robust N-channel MOSFET with low on-resistance is needed for surface-mount designs. Consider the I-Pak package dimensions and thermal characteristics against available PCB space. Evaluate the gate charge requirements against your driver capabilities to ensure efficient switching performance.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It shares core electrical specifications with other variants like the IRFR4620 but differs in physical packaging. The I-Pak form factor provides a compact solution for applications requiring moderate power handling in a surface-mount configuration.