Single FETs, MOSFETs IRFZ24PBF-BE3 product image

IRFZ24PBF-BE3

$1.28
  • Description:MOSFET N-CH 60V 17A TO220AB
  • Series:-
  • Mfr:Vishay Siliconix
  • Package:Tube

SKU:8761aeb7aa2f Category: Brand:

  
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IRFZ24PBF-BE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 60V 17A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFZ24PBF-BE3

  • Description:MOSFET N-CH 60V 17A TO220AB
  • Series:-
  • Mfr:Vishay Siliconix
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:100mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:640 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):60W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220AB
  • Package / Case:TO-220-3

Single FETs, MOSFETs datasheet and documents for IRFZ24PBF-BE3

IRFZ24PBF-BE3

Single FETs, MOSFETs Overview

The IRFZ24PBF-BE3 is a single N-channel HEXFET power MOSFET manufactured by Vishay Siliconix. It utilizes advanced planar strip technology to achieve extremely low on-resistance, optimized for high-speed switching applications. The device is housed in a TO-220AB package suitable for through-hole mounting. Key electrical parameters include a drain-source voltage (Vds) of 60 V and a continuous drain current (Id) of 17 A at case temperature. The maximum gate-source voltage (Vgs) is rated at ±20 V, with a typical gate charge (Qg) of 25 nC. The component supports a junction temperature range from -55°C to +175°C and offers a power dissipation capability of 60 W.

Single FETs, MOSFETs Feature Summary

  • Advanced planar strip technology ensures minimal on-resistance for efficient power handling.
  • Optimized for high-frequency switching operations within power conversion circuits.
  • Robust thermal performance allows operation up to a maximum junction temperature of 175°C.

Single FETs, MOSFETs Applications

  • DC-DC converters
  • Motor control circuits
  • Power amplifiers

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix BE3 indicates lead-free and halogen-free compliance per RoHS directives. Confirm the package type matches the required PCB footprint, specifically the TO-220AB configuration. Check for any recent Product Change Notifications regarding material or manufacturing site transfers that may affect long-term availability or specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a 60 V N-channel MOSFET with 17 A current capacity is required in a through-hole package. Compare against IRLZ24PBF if logic-level drive compatibility is critical, noting differences in threshold voltage characteristics. Ensure the application's thermal management can support the 60 W dissipation rating under expected load conditions.

Single FETs, MOSFETs Part Context

This part belongs to the IRFZ series of HEXFET power MOSFETs from Vishay. It serves as a lead-free compliant variant of the standard IRFZ24PBF. The series is widely recognized for balancing low on-resistance with fast switching speeds, making it a common choice in general-purpose power electronics designs requiring reliable N-channel switching.

Single FETs, MOSFETs Replacement Considerations

IRLZ24PBF is listed as a manufacturer-recommended alternative, though it is marked as obsolete. Verify electrical parameter compatibility before substitution.

IRFZ24PBF-BE3IRFZ24PBF-BE3
$1.28
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