IRFZ46NSTRLPBF

$1.98

Description：MOSFET N-CH 55V 53A D2PAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:7df7bcf18258 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRFZ46NSTRLPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 53A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFZ46NSTRLPBF

Description：MOSFET N-CH 55V 53A D2PAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：53A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：16.5mOhm @ 28A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：72 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1696 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：3.8W (Ta), 107W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IRFZ46NSTRLPBF

IRFZ46NSTRLPBF

Single FETs, MOSFETs Overview

The IRFZ46NSTRLPBF is a HEXFET N-channel power MOSFET in a D2PAK (TO-263) surface-mount package. It features a drain-source breakdown voltage of 55 V and a continuous drain current of 53 A at 25°C case temperature. The maximum on-resistance is 16.5 mΩ at VGS = 10V and ID = 28A. The device supports a gate-to-source voltage of ±20 V, operates within a junction temperature range of -55°C to +175°C, and has a total gate charge of 72 nC.

Single FETs, MOSFETs Feature Summary

Advanced processing technology for low on-resistance per silicon area
Fast switching capability with fully avalanche rated design
D2Pak package provides high power capability and lowest possible on-resistance in surface mount form

Single FETs, MOSFETs Applications

High current applications requiring low internal connection resistance
Switching circuits utilizing fast switching speed
Applications requiring ruggedized device design and reliability

Single FETs, MOSFETs Procurement Notes

Verify the component status as obsolete or end-of-life through official Infineon channels before procurement planning. Confirm that the D2PAK footprint matches the specific reel specifications required for automated assembly processes. Ensure compliance with RoHS lead-free requirements specified in the datasheet marking information.

Single FETs, MOSFETs Selection Notes

Select this component when a 55 V rating and 53 A continuous current capacity are required in a surface-mount configuration. Consider the 16.5 mΩ maximum on-resistance for conduction loss calculations. Evaluate thermal management needs based on the 1.4 °C/W junction-to-case thermal resistance and the 107 W power dissipation capability at 25°C case temperature.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. It utilizes advanced processing techniques to achieve extremely low on-resistance. The D2Pak package is designed to accommodate large die sizes, offering superior power handling compared to other surface-mount packages available at the time of its release.