IRLB8721PBF

$1.33

Description：MOSFET N-CH 30V 62A TO220AB
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:0c01a02c191e Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRLB8721PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 62A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRLB8721PBF

Description：MOSFET N-CH 30V 62A TO220AB
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：62A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：8.7mOhm @ 31A, 10V
Vgs(th) (Max) @ Id：2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs：13 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1077 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：65W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for IRLB8721PBF

IRLB8721PBF

Single FETs, MOSFETs Overview

The IRLB8721PbF is a HEXFET power MOSFET in a TO-220AB package. It features a 30V drain-to-source voltage (VDS) and a continuous drain current of 65A at 25°C case temperature. The maximum on-resistance (RDS(on)) is 8.7mΩ at VGS=10V and 16mΩ at VGS=4.5V. Total gate charge (Qg) is typically 7.6nC. It supports a single pulse avalanche energy of up to 98mJ and operates within a junction temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

Ultra-low gate impedance for high-frequency switching performance
Fully characterized avalanche voltage and current capabilities
Optimized specifically for UPS, inverter, and synchronous rectification applications

Single FETs, MOSFETs Applications

High frequency synchronous buck converters for computer processor power
High frequency isolated DC-DC converters with synchronous rectification for telecom and industrial use
UPS and inverter applications

Single FETs, MOSFETs Procurement Notes

Verify the component status as obsolete before procurement planning. Confirm that the TO-220AB through-hole package aligns with the target design constraints, as surface mount mounting is not recommended for this specific package type. Ensure thermal management solutions account for the specified junction-to-case thermal resistance values during operation.

Single FETs, MOSFETs Selection Notes

Select this component when low RDS(on) at 4.5V VGS is required alongside ultra-low gate impedance. It is suitable for designs needing fully characterized avalanche ratings. Consider the TO-220AB form factor for through-hole implementations where high current handling and robust heat dissipation are necessary for the intended power levels.

Single FETs, MOSFETs Part Context

This device belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. It utilizes silicon technology and is designed for industrial market qualification. The part number suffix 'PbF' indicates lead-free construction, adhering to environmental standards while maintaining the electrical characteristics typical of the standard HEXFET series.