IRLR3410TRLPBF

Single FETs, MOSFETs Overview

The IRLR3410TRLPBF is a fifth-generation HEXFET N-channel enhancement mode MOSFET in a D-Pak (TO-252) surface-mount package. It features a drain-source breakdown voltage of 100V and a continuous drain current of 17A at 25°C case temperature. The device achieves an ultra-low maximum on-resistance of 0.105Ω at VGS=10V, with logic-level gate drive capability down to 4.0V. Key electrical parameters include a total gate charge of 34nC, single-pulse avalanche energy rating of 150mJ, and a junction-to-case thermal resistance of 1.9°C/W. Operating temperatures range from -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• Logic level gate drive for direct compatibility with standard logic circuits
• Ultra-low on-resistance achieved through advanced processing techniques
• Fast switching characteristics combined with ruggedized device design
• Fully rated for repetitive avalanche energy applications

Single FETs, MOSFETs Applications

• High-frequency DC-DC converters
• Power management systems requiring efficient switching
• General-purpose power switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'TRLPbF' corresponds to the tape and reel packaging format containing 2000 units per standard pack. Confirm that the component meets RoHS compliance standards as indicated by the lead-free designation. Ensure the industrial qualification level aligns with the intended operational environment requirements before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a 100V N-channel MOSFET with low conduction losses is required in a surface-mount D-Pak footprint. The logic-level gate threshold allows for efficient driving from 5V or lower logic sources. Consider the 17A continuous current limit and thermal derating curves for high-temperature environments to ensure reliable operation within the specified safe operating area.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon HEXFET family, utilizing fifth-generation technology to minimize on-resistance per silicon area. The base part number IRLR3410PBF shares identical electrical characteristics but is available in tube packaging. The TRLPbF suffix specifically denotes the tape and reel configuration suitable for automated surface-mount assembly processes.

Single FETs, MOSFETs Replacement Considerations

The IRLU3410PbF serves as a pin-compatible alternative featuring straight leads for through-hole mounting while maintaining equivalent electrical performance.

Single FETs, MOSFETs FAQ

What is the maximum single-pulse avalanche energy rating?

The device is rated for a maximum single-pulse avalanche energy of 150 mJ under specified test conditions.

Is the device qualified for automotive applications?

The datasheet specifies an Industrial qualification level. Use in automotive or life support systems requires express written approval from Infineon Technologies.