Single FETs, MOSFETs IRLR3802TRPBF product image

IRLR3802TRPBF

  • Description:MOSFET N-CH 12V 84A DPAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)

SKU:1460cf9ae526 Category: Brand:

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IRLR3802TRPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 12V 84A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRLR3802TRPBF

  • Description:MOSFET N-CH 12V 84A DPAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):12 V
  • Current - Continuous Drain (Id) @ 25°C:84A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):2.8V, 4.5V
  • Rds On (Max) @ Id, Vgs:8.5mOhm @ 15A, 4.5V
  • Vgs(th) (Max) @ Id:1.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:41 nC @ 5 V
  • Vgs (Max):±12V
  • Input Capacitance (Ciss) (Max) @ Vds:2490 pF @ 6 V
  • FET Feature:-
  • Power Dissipation (Max):88W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-252AA (DPAK)
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for IRLR3802TRPBF

IRLR3802TRPBF

Single FETs, MOSFETs Overview

The IRLR3802TRPBF is a single N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features an 8.5 mΩ maximum drain-to-source on-resistance at VGS = 4.5V and supports a continuous drain current of 84 A at TC = 25°C. The device has a 12 V drain-source breakdown voltage, ±12 V gate-source voltage rating, and a total gate charge of 27 nC typical. It operates within a junction temperature range of -55°C to +175°C with a maximum power dissipation of 88 W.

Single FETs, MOSFETs Feature Summary

  • Ultra-low gate impedance for efficient switching
  • Very low RDS(on) for reduced conduction losses
  • Fully characterized avalanche voltage and current capability

Single FETs, MOSFETs Applications

  • High frequency 3.3V and 5V input point-of-load synchronous buck converters
  • Power management for networking equipment
  • Computing applications
  • Portable electronic devices

Single FETs, MOSFETs Procurement Notes

Verify the component datasheet against the manufacturer's official documentation to confirm electrical parameters and package dimensions. Ensure the ordering suffix matches the required tape-and-reel packaging configuration. Check for lead-free status and RoHS compliance requirements specific to your manufacturing process.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high current handling in a DPAK (TO-252) surface-mount package. Consider the thermal resistance characteristics and safe operating area when designing heat dissipation solutions. Verify that the gate drive voltage aligns with the specified threshold and on-resistance conditions for optimal performance.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It utilizes silicon technology and is designed for industrial market applications. The component is available in a lead-free DPAK package suitable for automated surface-mount assembly processes.

Single FETs, MOSFETs Replacement Considerations

Consult the manufacturer's cross-reference tools or official substitution guides to identify compatible alternatives. Verify that any substitute part meets the same voltage, current, and thermal specifications.

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