IS66WVC4M16ALL-7010BLI

Memory IC Overview

The IS66WVC4M16ALL-7010BLI is a 64 Mbit Pseudo Static Random Access Memory device utilizing a self-refresh DRAM array organized as 4 Meg words by 16 bits. It supports asynchronous, page, and burst operation modes with an asynchronous read access time of 70 ns. The device operates on dual voltage rails: VDD and VDDQ ranging from 1.7 V to 1.95 V. Maximum operating frequency reaches 104 MHz. Standby current is less than 180 uA, while deep power-down current is typically under 3 uA. It is housed in a 54-ball VFBGA package and functions within an industrial temperature range of -40°C to +85°C.

Memory IC Feature Summary

• Supports asynchronous, page mode, and high-performance synchronous burst read/write operations via a CellularRAM interface.
• Features multiple low-power mechanisms including reduced array refresh, temperature-controlled refresh, and deep power-down mode.
• Includes user-accessible configuration registers for bus control and refresh management alongside a device ID register.
• Utilizes separate power rails for the core and I/O to allow independent voltage optimization.

Memory IC Applications

• Low-power portable electronic devices
• Wireless communication systems
• Cellular infrastructure equipment

Memory IC Procurement Notes

Verify that the specific suffix 'ALL' corresponds to the exact pinout and electrical specifications required for your design, as ordering variations may exist. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Ensure the 54-ball VFBGA footprint matches your PCB layout constraints. Validate that the 1.7V to 1.95V supply range aligns with your system's power delivery network capabilities.

Memory IC Selection Notes

Select this component when a high-density memory solution requires both standard asynchronous compatibility and high-speed synchronous burst performance. It is suitable for applications needing significant standby current reduction through configurable refresh modes. Consider this part if the system architecture benefits from separate I/O and core voltage domains. Ensure the controller can handle the specific CellularRAM bus protocol and register configuration sequences.

Memory IC Part Context

This device belongs to the IS66WVC4M16 family of CellularRAM products developed by ISSI. These components are designed as high-speed CMOS pseudo-static random access memories. They integrate a DRAM core with SRAM-like interfaces to provide high bandwidth while maintaining low power consumption characteristics typical of portable electronics.

Memory IC Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.

Memory IC FAQ

How does the device manage refresh cycles during low-power states?

The device employs Temperature-Controlled Refresh (TCR) to adjust rates based on internal sensors and Partial-Array Refresh (PAR) to limit refresh activity to specific memory sections, thereby reducing standby current drain.

What is the function of the WAIT output signal during burst operations?

The WAIT output asserts to indicate that the device requires additional time before data transfer can occur. It arbitrates collisions between refresh cycles and read/write operations, de-asserting only when valid data is ready for transfer.