Single FETs, MOSFETs ISK024NE2LM5AUSA1 product image

ISK024NE2LM5AUSA1

$1.03
  • Description:TRENCH <= 40V
  • Series:OptiMOS™ 5
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:b1bc992dc744 Category: Brand:

  
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ISK024NE2LM5AUSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is TRENCH. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for ISK024NE2LM5AUSA1

  • Description:TRENCH <= 40V
  • Series:OptiMOS™ 5
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:20A (Ta), 103A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):2.1W (Ta), 39W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-VSON-6-1
  • Package / Case:6-PowerVDFN

Single FETs, MOSFETs datasheet and documents for ISK024NE2LM5AUSA1

ISK024NE2LM5AUSA1

Single FETs, MOSFETs Overview

The ISK024NE2LM5 is an OptiMOS™ 5 N-channel power transistor rated at 25 V. It features a maximum on-resistance of 2.4 mΩ and a continuous drain current of 103 A at 25 °C case temperature. The device utilizes a PG-VSON-6 package with dimensions of 2x2 mm. Key electrical parameters include a gate charge of 6.5 nC (0V to 4.5V) and 14.0 nC (0V to 10V). It offers a thermal resistance junction-to-case of 1.6 °C/W and operates within a temperature range of -55 °C to 150 °C.

Single FETs, MOSFETs Feature Summary

  • Lowest on-resistance in a 2x2 package
  • Superior thermal resistance for a 2x2 package
  • Optimized for highest performance and power density
  • 100% avalanche tested

Single FETs, MOSFETs Applications

  • Industrial applications requiring high power density
  • Power conversion systems utilizing compact form factors
  • Automotive electronics compatible with industrial qualification standards

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code ISK024NE2LM5 against the datasheet revision 2.2. Confirm that the required package marking matches the official specification. Ensure compliance with RoHS and halogen-free requirements as stated in the product validation section. Check for any specific JEDEC industrial application qualifications relevant to your design environment.

Single FETs, MOSFETs Selection Notes

Select this component when minimizing footprint is critical due to its 2x2 mm PG-VSON-6 package. Consider the low thermal resistance for efficient heat dissipation in confined spaces. Evaluate the gate charge values for switching speed requirements in low-voltage, high-current applications. Ensure the operating voltage does not exceed the 25 V rating under all transient conditions.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS™ 5 family from Infineon Technologies, designed for low-voltage power switching. It represents an advancement in silicon technology aimed at improving efficiency and reducing size compared to previous generations. The device is specifically engineered for applications demanding high current handling capabilities within extremely small surface-mount packages.

Single FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

ISK024NE2LM5AUSA1ISK024NE2LM5AUSA1
$1.03
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