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ISK024NE2LM5AUSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is TRENCH. Review the specifications below when checking this part for your BOM.
The ISK024NE2LM5 is an OptiMOS™ 5 N-channel power transistor rated at 25 V. It features a maximum on-resistance of 2.4 mΩ and a continuous drain current of 103 A at 25 °C case temperature. The device utilizes a PG-VSON-6 package with dimensions of 2x2 mm. Key electrical parameters include a gate charge of 6.5 nC (0V to 4.5V) and 14.0 nC (0V to 10V). It offers a thermal resistance junction-to-case of 1.6 °C/W and operates within a temperature range of -55 °C to 150 °C.
Verify the specific ordering code ISK024NE2LM5 against the datasheet revision 2.2. Confirm that the required package marking matches the official specification. Ensure compliance with RoHS and halogen-free requirements as stated in the product validation section. Check for any specific JEDEC industrial application qualifications relevant to your design environment.
Select this component when minimizing footprint is critical due to its 2x2 mm PG-VSON-6 package. Consider the low thermal resistance for efficient heat dissipation in confined spaces. Evaluate the gate charge values for switching speed requirements in low-voltage, high-current applications. Ensure the operating voltage does not exceed the 25 V rating under all transient conditions.
This part belongs to the OptiMOS™ 5 family from Infineon Technologies, designed for low-voltage power switching. It represents an advancement in silicon technology aimed at improving efficiency and reducing size compared to previous generations. The device is specifically engineered for applications demanding high current handling capabilities within extremely small surface-mount packages.
No public confirmed substitute part numbers are available in the provided documentation.
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