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ISL2110AR4Z is listed in the Gate Driver range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC GATE DRVR HALF-BRIDGE 12DFN. Review the specifications below when checking this part for your BOM.
The ISL2110AR4Z is a half-bridge gate driver IC manufactured by Renesas Electronics Corporation. It features independent high-side and low-side outputs designed for driving N-channel MOSFETs. The device operates with a supply voltage range of 8V to 14V and supports a maximum bootstrap supply voltage of 114V. It provides peak output currents of 3A pull-up and 4A pull-down. Typical rise and fall times are 9ns and 7.5ns, respectively. The component is housed in a 12-DFN (4x4) package with an exposed pad and functions within a junction temperature range of -40°C to 125°C.
Verify the specific suffix AR4Z to confirm the 12-DFN package variant. Check current availability status as this part may be subject to end-of-life notices or discontinuation. Ensure compatibility with existing PCB footprints for the 12-VFDFN exposed pad configuration. Confirm RoHS3 compliance requirements for the target assembly process.
Select this driver for applications requiring independent control of high-side and low-side switches with high voltage tolerance. Consider the 114V bootstrap rating for high-side drive requirements. Evaluate the 3A/4A peak current capability against the total gate charge of the target MOSFETs. Verify that the 8V to 14V VCC range aligns with the system power supply architecture.
This component belongs to the ISL2110 family of half-bridge gate drivers from Renesas. It is distinct from the ISL2111 series, which offers similar electrical characteristics but utilizes a different TDFN-EP-10 package. The ISL2110AR4Z specifically denotes the 12-DFN version intended for compact surface-mount designs.
The ISL2111ARTZ is a functional alternative within the same family, offering identical electrical specifications but packaged in a TDFN-EP-10 format. Verify pinout compatibility and physical footprint differences before substitution.
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