Gate Driver ISL6612AIBZ-T product image

ISL6612AIBZ-T

  • Description:IC GATE DRVR HALF-BRIDGE 8SOIC
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)

SKU:9376546c433e Category: Brand:

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ISL6612AIBZ-T is listed in the Gate Driver range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC GATE DRVR HALF-BRIDGE 8SOIC. Review the specifications below when checking this part for your BOM.

Gate Driver specifications for ISL6612AIBZ-T

  • Description:IC GATE DRVR HALF-BRIDGE 8SOIC
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)
  • Driven Configuration:Half-Bridge
  • Channel Type:Synchronous
  • Number of Drivers:2
  • Gate Type:MOSFET (N-Channel)
  • Voltage - Supply:10.8V ~ 13.2V
  • Logic Voltage - VIL, VIH:-
  • Current - Peak Output (Source, Sink):1.25A, 2A
  • Input Type:Non-Inverting
  • Rise / Fall Time (Typ):26ns, 18ns
  • Operating Temperature:-40°C ~ 125°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):36 V

Gate Driver datasheet and documents for ISL6612AIBZ-T

ISL6612AIBZ-T

Gate Driver Overview

The ISL6612AIBZ-T is a synchronous half-bridge gate driver manufactured by Renesas Electronics Corporation. It features two independent drivers with non-inverting inputs, designed for driving N-channel MOSFETs in high-voltage applications. The device supports a maximum bootstrap supply voltage of 36 V and operates within a power supply range of 10.8 V to 13.2 V. It delivers peak output currents of 1.25 A source and 2 A sink. Typical rise and fall times are 26 ns and 18 ns, respectively. The component is housed in an 8-SOIC package with a thermal pad and functions reliably across a junction temperature range of 0°C to 125°C.

Gate Driver Feature Summary

  • Synchronous half-bridge configuration with dual non-inverting channels
  • High-side capability supporting up to 36 V bootstrap voltage
  • Optimized switching performance with low propagation delay characteristics

Gate Driver Applications

  • Synchronous buck converter circuits
  • Motor control systems requiring high-side N-channel MOSFET drive
  • DC-DC conversion topologies utilizing isolated or bootstrap gate drive methods

Gate Driver Procurement Notes

Verify the specific suffix 'AIBZ' against official Renesas documentation to confirm the disabled over-temperature protection feature, as variants differ significantly. Confirm availability status, as this part number may be discontinued or subject to last-time-buy restrictions. Ensure the ordering suffix matches the exact functional specification required for the design, particularly regarding fault protection mechanisms.

Gate Driver Selection Notes

Select this component when a synchronous half-bridge driver with disabled over-temperature protection is required. Compare against the ISL6612EIBZ-T variant if integrated thermal shutdown functionality is necessary for the application. Consider the 8-SOIC package constraints for thermal management and PCB layout. Verify that the 36 V high-side voltage rating aligns with the target circuit's bus voltage and bootstrap requirements.

Gate Driver Part Context

The ISL6612 series comprises synchronous half-bridge gate drivers intended for high-frequency power conversion. The ISL6612AIBZ-T represents a specific variant within this family, distinguished by its pinout and internal logic configuration. It belongs to the broader portfolio of power management ICs offered by Renesas, targeting efficient energy conversion in industrial and consumer electronics.

Gate Driver Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided data. Consult Renesas official cross-reference lists for potential replacements.

ISL6612AIBZ-TISL6612AIBZ-T

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