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ISQ1XG is listed in the Transistor, Photovoltaic Output Optoisolators range at ChipApex. The manufacturer field lists Isocom Components 2004 LTD. Its product description is OPTOISO 5.3KV TRANS W/BASE 16DIP. Review the specifications below when checking this part for your BOM.
The ISQ1XG is a single-channel optocoupler manufactured by Isocom Components 2004 LTD. It features an infrared LED input and an NPN silicon phototransistor output with a base terminal, housed in a 16-pin DIP package. The device provides an isolation voltage of 5300Vrms. Key electrical parameters include a maximum forward voltage of 1.65V, a maximum input current of 60mA, and a typical rise time of 2µs. The minimum and maximum current transfer ratios are specified at 40% and 80%, respectively.
Verify the specific suffix 'XG' against official manufacturer documentation to confirm pinout configuration and compliance certifications. Ensure the selected component matches the required 16-pin DIP form factor and that the 5300Vrms isolation rating meets the safety standards of the target application environment.
Select this component when a single channel with a transistor output base terminal is required for precise switching control. The 16-pin DIP package suits through-hole mounting applications. Consider the 40-80% current transfer ratio range for logic level compatibility and verify that the 2µs rise time aligns with the system's signal frequency requirements.
This part belongs to the family of high-density optically coupled isolators produced by Isocom Components 2004 LTD. These devices utilize infrared LEDs and NPN phototransistors to provide reliable electrical isolation. The ISQ1XG specifically offers a single-channel configuration within a 16-pin package, distinguishing it from multi-channel variants like the ISQ1X.
The base terminal allows for external connection to adjust the sensitivity or switching speed of the phototransistor, providing additional control over the output state compared to standard two-terminal transistors.
The device supports an isolation voltage of 5300Vrms, ensuring safe separation between the input LED and output phototransistor circuits.
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