IV1D12005O2

Single Diodes Overview

The IV1D12005O2 is a Silicon Carbide (SiC) Schottky diode manufactured by Inventchip Technology. It features a maximum repetitive reverse voltage of 1200 V and an average forward current rating of 5 A at case temperatures up to 25°C. The device utilizes a TO-220-2 through-hole package for robust mounting. Key thermal specifications include a total power dissipation of 110 W at Tc=25°C and an I²t value of 17 A²s at Tc=25°C with a pulse width of 10 ms. The component operates within a junction temperature range of -55°C to +175°C, ensuring reliability in high-temperature environments.

Single Diodes Feature Summary

• Utilizes Silicon Carbide semiconductor material for superior thermal performance and high-temperature stability compared to traditional silicon devices.

Single Diodes Applications

• High-frequency switching power supplies
• Industrial motor drives
• Uninterruptible power supply (UPS) systems

Single Diodes Procurement Notes

Verify the specific datasheet version and electrical parameters directly from Inventchip Technology or authorized distributors before integration. Confirm that the TO-220-2 package dimensions match your PCB footprint requirements. Ensure thermal management solutions are adequate for the specified power dissipation limits under actual operating conditions.

Single Diodes Selection Notes

Select this component when designing circuits requiring high breakdown voltage and low reverse recovery charge characteristics typical of SiC technology. Consider the 1200 V rating for medium-voltage applications. Evaluate the thermal resistance and heat sinking capabilities required to maintain junction temperatures within the specified operational range during peak load conditions.

Single Diodes Part Context

Inventchip Technology specializes in the development of Silicon Carbide power devices, gate driver ICs, and power management controllers. The company operates its own IATF 16949-certified wafer fabrication facility located in Zhejiang Province, China, supporting the production of advanced SiC components like the IV1D12005O2.

Single Diodes Replacement Considerations

Consult official Inventchip documentation for verified substitute part numbers. Cross-referencing with other manufacturers requires careful validation of electrical ratings, pin configurations, and thermal characteristics to ensure compatibility without compromising system performance.

Single Diodes FAQ

What is the maximum junction temperature for the IV1D12005O2?

The maximum operating junction temperature range for the IV1D12005O2 extends up to +175°C.

Does the IV1D12005O2 have a fast recovery time?

As a Silicon Carbide Schottky diode, it exhibits negligible reverse recovery charge, resulting in extremely fast switching speeds suitable for high-frequency applications.