Single Diodes IV1D12010O2 product image

IV1D12010O2

$9.91
  • Description:DIODE SIL CARB 1200V 28A TO220
  • Series:-
  • Mfr:Inventchip
  • Package:Tube

SKU:534ad13d3e20 Category: Brand:

  
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IV1D12010O2 is listed in the Single Diodes range at ChipApex. The manufacturer field lists Inventchip. Its product description is DIODE SIL CARB 1200V 28A TO220. Review the specifications below when checking this part for your BOM.

Single Diodes specifications for IV1D12010O2

  • Description:DIODE SIL CARB 1200V 28A TO220
  • Series:-
  • Mfr:Inventchip
  • Package:Tube
  • Technology:SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max):1200 V
  • Current - Average Rectified (Io):28A
  • Voltage - Forward (Vf) (Max) @ If:1.8 V @ 10 A
  • Speed:No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr):0 ns
  • Current - Reverse Leakage @ Vr:50 µA @ 1200 V
  • Capacitance @ Vr, F:575pF @ 1V, 1MHz
  • Mounting Type:Through Hole
  • Package / Case:TO-220-2
  • Supplier Device Package:TO-220-2
  • Operating Temperature - Junction:-55°C ~ 175°C
  • Grade:-
  • Qualification:-

Single Diodes datasheet and documents for IV1D12010O2

IV1D12010O2

Single Diodes Overview

The IV1D12010O2 is a silicon carbide (SiC) power device manufactured by Inventchip Technology. It belongs to the company's portfolio of SiC MOSFETs and related power semiconductor components designed for high-efficiency energy conversion. The device utilizes Silicon Carbide material properties to support high-voltage and high-temperature operations, aligning with the manufacturer's focus on developing cost-effective SiC power devices.

Single Diodes Feature Summary

  • Utilizes Silicon Carbide (SiC) semiconductor technology for enhanced thermal performance.
  • Designed for high-efficiency power switching applications.
  • Supports operation in demanding thermal environments typical of modern power electronics.

Single Diodes Applications

  • High-efficiency power supply systems
  • Industrial motor drives
  • Renewable energy inverters

Single Diodes Procurement Notes

Verify the specific datasheet for the IV1D12010O2 directly from Inventchip Technology or authorized distributors. Confirm that the part number corresponds to the intended SiC MOSFET variant, as Inventchip produces multiple discrete semiconductor products including diode arrays and gate drivers. Ensure compatibility with your system's voltage and current requirements before procurement.

Single Diodes Selection Notes

Select this component when designing circuits requiring the high breakdown voltage and low switching losses inherent to Silicon Carbide technology. Consider the thermal management capabilities required for SiC devices compared to traditional silicon counterparts. Verify package type and pinout compatibility with your PCB layout against official mechanical drawings.

Single Diodes Part Context

Inventchip Technology Co., Ltd. is a semiconductor company specializing in Silicon Carbide (SiC) power devices, gate driver ICs, and power management controllers. Founded in 2017, the company operates a SiC fabrication facility in Zhejiang Province, China, and focuses on developing high-performance power semiconductors for industrial and consumer applications.

Single Diodes Replacement Considerations

No verified public substitute part numbers are available for the IV1D12010O2. Cross-referencing should be performed using key electrical parameters such as drain-source voltage, continuous drain current, and on-resistance from official Inventchip documentation.

IV1D12010O2IV1D12010O2
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