IV1Q12030T4G

$13.56

Description：SIC MOSFET, 1200V 30MOHM, TO247-
Series：-
Mfr：Inventchip
Package：Tube

SKU:7fdfac5c9be0 Category: Single FETs, MOSFETs Brand: Inventchip

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Product introduction

IV1Q12030T4G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Inventchip. Its product description is SIC MOSFET, 1200V 30MOHM, TO247-. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IV1Q12030T4G

Description：SIC MOSFET, 1200V 30MOHM, TO247-
Series：-
Mfr：Inventchip
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：79A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：20V
Rds On (Max) @ Id, Vgs：40mOhm @ 40A, 20V
Vgs(th) (Max) @ Id：5V @ 9.4mA
Gate Charge (Qg) (Max) @ Vgs：168 nC @ 20 V
Vgs (Max)：+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds：3980 pF @ 800 V
FET Feature：-
Power Dissipation (Max)：410W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-4
Package / Case：TO-247-4

Single FETs, MOSFETs datasheet and documents for IV1Q12030T4G

IV1Q12030T4G

Single FETs, MOSFETs Overview

The IV1Q12030T4G is a Silicon Carbide (SiC) MOSFET manufactured by Inventchip Technology, designed for high-voltage power switching applications. It features a 1200V drain-source voltage rating and a maximum continuous drain current of 79A at 25°C case temperature. The device exhibits a typical static on-resistance of 30mΩ and supports an operating junction temperature up to 175°C. Packaged in a TO-247-4 format with Kelvin gate connections, it integrates a robust intrinsic body diode with a reverse recovery time of 20ns.

Single FETs, MOSFETs Feature Summary

High blocking voltage capability combined with low on-resistance for efficient power handling
Fast switching performance supported by low capacitance values
Robust intrinsic body diode with very fast reverse recovery characteristics
Kelvin gate input configuration to simplify driver circuit design

Single FETs, MOSFETs Applications

Solar inverters
Uninterruptible Power Supplies (UPS)
Motor drivers
High voltage DC/DC converters
Switch mode power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision date against manufacturing records to ensure alignment with current production specifications. Confirm that thermal management solutions accommodate the specified junction-to-case thermal resistance. Ensure driver circuits support the recommended turn-on and turn-off voltage levels to maintain optimal switching performance and prevent overstress conditions during operation.

Single FETs, MOSFETs Selection Notes

Select this component when designing systems requiring high efficiency at elevated voltages. The TO-247-4 package facilitates effective heat dissipation through direct mounting. Evaluate the total gate charge requirements against available driver capabilities to manage switching losses. Consider the maximum spike voltage limits when designing protection circuits for transient events in the application environment.

Single FETs, MOSFETs Part Context

This SiC MOSFET belongs to Inventchip's discrete semiconductor portfolio focused on advanced power devices. The company specializes in Silicon Carbide technology development and manufacturing. The product line targets industrial and automotive sectors demanding superior thermal stability and switching speeds compared to traditional silicon alternatives.