IV1Q12050T4Z

$12.61

Description：SIC MOSFET, 1200V 50MOHM, TO247-
Series：-
Mfr：Inventchip
Package：Tube

SKU:c6cf7787b460 Category: Single FETs, MOSFETs Brand: Inventchip

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Product introduction

IV1Q12050T4Z is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Inventchip. Its product description is SIC MOSFET, 1200V 50MOHM, TO247-. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IV1Q12050T4Z

Description：SIC MOSFET, 1200V 50MOHM, TO247-
Series：-
Mfr：Inventchip
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：20V
Rds On (Max) @ Id, Vgs：65mOhm @ 20A, 20V
Vgs(th) (Max) @ Id：5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs：120 nC @ 20 V
Vgs (Max)：+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds：2750 pF @ 800 V
FET Feature：-
Power Dissipation (Max)：344W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-4
Package / Case：TO-247-4

Single FETs, MOSFETs datasheet and documents for IV1Q12050T4Z

IV1Q12050T4Z

Single FETs, MOSFETs Overview

The IV1Q12050T4Z is an automotive-grade Silicon Carbide (SiC) MOSFET manufactured by InventChip. It features a 1200V drain-source voltage and a maximum continuous drain current of 58A at 25°C case temperature, with a typical static on-resistance of 50mΩ. The device supports a maximum operating junction temperature of 175°C and includes a Kelvin gate for optimized driver circuit design. Key electrical parameters include a total gate charge of 120nC and a reverse recovery time of 27.9ns for the intrinsic body diode.

Single FETs, MOSFETs Feature Summary

High blocking voltage combined with low on-resistance
High-speed switching capability with low capacitance
Robust intrinsic body diode with fast recovery characteristics
Kelvin gate input to simplify driver circuit design

Single FETs, MOSFETs Applications

On-board chargers
Automotive compressor inverters
Automotive DC/DC converters
Solar inverters
Switch mode power supplies

Single FETs, MOSFETs Procurement Notes

Verify that the component carries AEC-Q101 qualification status as specified in the datasheet. Confirm the package type matches the TO-247-4 outline dimensions provided. Ensure the ordering suffix Z corresponds to the correct assembly location and lot traceability codes defined in the marking diagram before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring low conduction losses and high thermal stability. The 1200V rating and 175°C junction temperature capability make it suitable for demanding automotive environments. Evaluate the 50mΩ on-resistance against system efficiency targets and ensure the driver can support the recommended 20V turn-on voltage for optimal performance.

Single FETs, MOSFETs Part Context

This part belongs to the IV1Q series of SiC MOSFETs from InventChip, designed specifically for automotive and industrial power conversion. The TO-247-4 package provides robust mechanical mounting and efficient heat dissipation through the central drain tab. The 'Z' suffix indicates a specific assembly location and lot traceability code within the manufacturer's production tracking system.