IV2Q12030D7Z

$10.61

Description：GEN2, SIC MOSFET, 1200V 30MOHM,
Series：-
Mfr：Inventchip
Package：Tube

SKU:4efea53ec507 Category: Single FETs, MOSFETs Brand: Inventchip

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Product introduction

IV2Q12030D7Z is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Inventchip. Its product description is GEN2, SIC MOSFET, 1200V 30MOHM,. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IV2Q12030D7Z

Description：GEN2, SIC MOSFET, 1200V 30MOHM,
Series：-
Mfr：Inventchip
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：79A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：18V
Rds On (Max) @ Id, Vgs：39mOhm @ 30A, 18V
Vgs(th) (Max) @ Id：4.5V @ 12mA
Gate Charge (Qg) (Max) @ Vgs：135 nC @ 18 V
Vgs (Max)：+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds：3000 pF @ 800 V
FET Feature：-
Power Dissipation (Max)：395W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-263-7
Package / Case：TO-263-7

Single FETs, MOSFETs datasheet and documents for IV2Q12030D7Z

IV2Q12030D7Z

Single FETs, MOSFETs Overview

The Inventchip IV2Q12030D7Z is a Silicon Carbide (SiC) MOSFET belonging to the second generation of the company's discrete power device portfolio. It features an N-channel configuration housed in a TO-263-7 package, designed for high-voltage applications with a drain-source voltage rating of 1200 V. The component supports a continuous drain current of 30 A at case temperature and offers a maximum on-resistance of 30 mΩ under specified drive conditions. With a power dissipation capacity of 150 W and an operating junction temperature range extending up to 175°C, it provides robust thermal performance suitable for demanding industrial environments.

Single FETs, MOSFETs Feature Summary

Utilizes Silicon Carbide semiconductor technology for superior high-temperature and high-frequency operation compared to traditional silicon devices.
Features a low on-resistance characteristic that minimizes conduction losses during switching operations.
Designed with a rugged construction capable of withstanding high thermal stress and electrical loads.

Single FETs, MOSFETs Applications

Industrial motor drives
Uninterruptible power supplies
High-efficiency DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'D7Z' against the manufacturer's official datasheet to confirm the exact packaging type and reel specifications. Ensure the ordering information matches the required lead times and quality certifications such as RoHS compliance before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high breakdown voltage and efficient thermal management. Compare the 30 mΩ on-resistance and 1200 V rating against system requirements to ensure compatibility with existing gate drivers and thermal solutions.

Single FETs, MOSFETs Part Context

This part belongs to Inventchip's Generation 2 SiC MOSFET lineup, which focuses on improving power density and efficiency. The series targets applications where size reduction and heat dissipation are critical constraints, offering a balance between voltage handling capability and current carrying capacity.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution lists for equivalent 1200 V SiC MOSFETs in TO-263 packages. Verify pinout compatibility and thermal resistance values before replacing with components from other manufacturers.