IV2Q171R0D7Z

$4.79

Description：GEN2, SIC MOSFET, 1700V 1000MOHM
Series：-
Mfr：Inventchip
Package：Tube

SKU:ba0544e93cba Category: Single FETs, MOSFETs Brand: Inventchip

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Product introduction

IV2Q171R0D7Z is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Inventchip. Its product description is GEN2, SIC MOSFET, 1700V 1000MOHM. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IV2Q171R0D7Z

Description：GEN2, SIC MOSFET, 1700V 1000MOHM
Series：-
Mfr：Inventchip
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1700 V
Current - Continuous Drain (Id) @ 25°C：6.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：18V
Rds On (Max) @ Id, Vgs：910mOhm @ 1A, 18V
Vgs(th) (Max) @ Id：4.5V @ 380uA
Gate Charge (Qg) (Max) @ Vgs：16.5 nC @ 18 V
Vgs (Max)：+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds：285 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：73W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-263-7
Package / Case：TO-263-7

Single FETs, MOSFETs datasheet and documents for IV2Q171R0D7Z

IV2Q171R0D7Z

Single FETs, MOSFETs Overview

The IV2Q171R0D7Z is a second-generation silicon carbide (SiC) MOSFET manufactured by Inventchip. It features a 1700V drain-source voltage rating and a maximum on-resistance of 910mΩ at VGS=18V and ID=1A. The device supports continuous drain currents of 6.3A at 25°C case temperature and 4.8A at 100°C. It utilizes a TO-263-7 package with a thermal resistance from junction to case of 2.05°C/W. The component operates within a junction temperature range of -55°C to 175°C and includes a Kelvin gate input for optimized driver circuit design.

Single FETs, MOSFETs Feature Summary

Second-generation SiC MOSFET technology supporting +15V to +18V gate drive voltages
Ultra-fast and robust intrinsic body diode characteristics
Kelvin gate input configuration to ease driver circuit design
High-speed switching capability combined with low capacitance values

Single FETs, MOSFETs Applications

Solar inverters
Auxiliary power supplies
Switch mode power supplies
Smart meters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix D7Z against official Inventchip documentation to confirm the exact package variant and assembly location. Ensure that the procurement channel provides original manufacturer documentation, including the Rev1.2 datasheet, to validate compliance with AEC-Q101 qualification standards and RoHS3 specifications before finalizing acquisition.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring efficient thermal management and fast switching speeds. The TO-263-7 package facilitates through-hole mounting with an exposed pad for heat dissipation. Designers must account for the recommended turn-off voltage range of -5V to -2V and ensure the gate driver can handle the transient spike voltage limits specified in the absolute maximum ratings table.

Single FETs, MOSFETs Part Context

This part belongs to Inventchip's second-generation silicon carbide MOSFET lineup, designed for high-performance power conversion systems. The product series emphasizes low on-resistance relative to blocking voltage, targeting efficiency improvements in renewable energy and industrial power electronics sectors compared to previous generation devices.