IXFE180N20

$21.67

Description：MOSFET N-CH 200V 158A SOT227B
Series：HiPerFET™
Mfr：IXYS
Package：Tube

SKU:7142474e827f Category: Single FETs, MOSFETs Brand: IXYS

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Product introduction

IXFE180N20 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET N-CH 200V 158A SOT227B. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IXFE180N20

Description：MOSFET N-CH 200V 158A SOT227B
Series：HiPerFET™
Mfr：IXYS
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：158A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：12mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id：4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs：380 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：14400 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：500W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Supplier Device Package：SOT-227B
Package / Case：SOT-227-4, miniBLOC

Single FETs, MOSFETs datasheet and documents for IXFE180N20

IXFE180N20

Single FETs, MOSFETs Overview

The IXFE180N20 is a discontinued N-channel power MOSFET from the HiPerFET series, manufactured by IXYS. It features a SOT-227B (miniBLOC) base-mount package designed for high-current applications. Key electrical parameters include a drain-source voltage of 200 V and a continuous drain current of 158 A at case temperature. The device exhibits a maximum on-resistance of 12 milliohms at 10 V gate drive. Thermal performance supports up to 500 W power dissipation at case temperature, with an operating junction temperature range spanning -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

High current handling capability suitable for heavy-duty switching loads
Low on-state resistance minimizes conduction losses in power circuits
Robust thermal design allows effective heat dissipation via base mounting

Single FETs, MOSFETs Applications

Motor control systems requiring high current switching
Industrial power conversion units
High-power DC-DC converter topologies

Single FETs, MOSFETs Procurement Notes

This component has been officially declared obsolete by the manufacturer as of November 2023. Verification of availability should focus on surplus distributors or secondary markets rather than standard supply chains. Engineers must confirm the authenticity of stock sources due to the end-of-life status. Replacement strategies should prioritize the identified substitute part numbers to ensure long-term project viability and supply chain stability.

Single FETs, MOSFETs Selection Notes

Designers should evaluate the thermal management requirements carefully given the 500 W dissipation rating, which relies on proper heatsinking to the base. The 200 V voltage rating defines the maximum blocking capability for the circuit topology. Gate drive characteristics must accommodate the specified charge requirements to ensure efficient switching transitions within the allowed temperature limits.

Single FETs, MOSFETs Part Context

Part of the HiPerFET family, this device utilizes advanced planar technology to achieve low specific on-resistance. The miniBLOC package provides a direct thermal path from the silicon die to the mounting surface, facilitating efficient cooling in high-power density designs compared to traditional leaded packages.