IXFH6N100

Single FETs, MOSFETs Overview

The IXFH6N100 is an N-Channel Enhancement Mode Power MOSFET from the HiPerFET HDMOSTM family, rated for a drain-source voltage of 1000 V and a continuous drain current of 6 A. It features a maximum on-state resistance of 2.0 Ohms at VGS = 10 V. The device operates within a junction temperature range of -55°C to +150°C and utilizes a TO-247 AD package.

Single FETs, MOSFETs Feature Summary

• HDMOSTM process technology providing low RDS(on) and fast intrinsic rectifier characteristics with low reverse recovery time.
• Rugged polysilicon gate cell structure designed for high dv/dt performance and Unclamped Inductive Switching (UIS) rating.
• Low package inductance design facilitating easy drive and protection requirements.

Single FETs, MOSFETs Applications

• DC-DC converters
• Synchronous rectification
• Switched-mode and resonant-mode power supplies
• AC motor control

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm pinout configuration and package variant. Ensure the component meets required RoHS compliance standards before integration. Cross-reference datasheet electrical limits with actual circuit operating conditions to prevent exceeding absolute maximum ratings during procurement validation.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high breakdown voltage and rugged switching capabilities. Evaluate thermal management requirements based on the specified power dissipation limits. Consider the UIS rating for inductive load protection needs. Verify that the gate charge parameters align with the driving circuit's capability for efficient switching.

Single FETs, MOSFETs Part Context

This part belongs to the HiPerFET HDMOSTM family, which integrates high-voltage MOSFETs with optimized body diodes. The series is engineered for high-frequency power conversion applications where low reverse recovery charge and high dv/dt immunity are critical for system efficiency and reliability.

Single FETs, MOSFETs Replacement Considerations

The IXFH6N90 serves as a direct substitute within the same family, offering identical current and package specifications but with a reduced 900 V drain-source voltage rating. Verify that the lower voltage rating meets the application's peak voltage requirements before substitution.