IXFK80N20

Description：MOSFET N-CH 200V 80A TO264AA
Series：HiPerFET™
Mfr：IXYS
Package：Tube

SKU:a022c5922208 Category: Single FETs, MOSFETs Brand: IXYS

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Product introduction

IXFK80N20 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET N-CH 200V 80A TO264AA. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IXFK80N20

Description：MOSFET N-CH 200V 80A TO264AA
Series：HiPerFET™
Mfr：IXYS
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：30mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id：4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs：280 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5900 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：360W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-264AA (IXFK)
Package / Case：TO-264-3, TO-264AA

Single FETs, MOSFETs datasheet and documents for IXFK80N20

IXFK80N20

Single FETs, MOSFETs Overview

The IXFK80N20 is a single N-Channel enhancement mode MOSFET from the HyperFET series, manufactured by IXYS. It utilizes silicon technology and is housed in a TO-264-3 through-hole package. The device features a drain-source breakdown voltage of 200 V and supports a continuous drain current of 80 A. Its maximum on-resistance is specified at 30 mOhms. The component operates within a temperature range of -55 C to +150 C, with a power dissipation rating of 360 W. Gate-source voltage limits are defined between -20 V and 20 V.

Single FETs, MOSFETs Feature Summary

HyperFET technology for optimized performance
Avalanche rated capability
Through-hole mounting configuration

Single FETs, MOSFETs Applications

Switch-mode power supplies
DC choppers
Motor control circuits

Single FETs, MOSFETs Procurement Notes

Verify component authenticity due to discontinued status. Confirm datasheet revisions match design requirements. Check RoHS compliance documentation. Validate package integrity upon receipt. Ensure storage conditions meet semiconductor standards.

Single FETs, MOSFETs Selection Notes

Compare on-resistance and thermal characteristics against alternatives. Evaluate package compatibility with existing PCB layouts. Assess switching speed requirements against delay times. Consider thermal management solutions for high-current operation.

Single FETs, MOSFETs Part Context

This part belongs to the IXYS HyperFET family of power MOSFETs. It shares the TO-264-3 form factor with other high-current variants. The series targets applications requiring robust switching performance. Manufacturing processes focus on low on-resistance and high reliability.