IXFT13N100

Single FETs, MOSFETs Overview

The IXFT13N100 is an N-Channel Enhancement Mode Power MOSFET from the HiPerFET family, utilizing HDMOSTM technology. It features a TO-268 (D3PAK) surface-mount package with a tab connected to the drain. Key electrical parameters include a drain-source breakdown voltage of 1000 V and a continuous drain current of 12.5 A at 25°C case temperature. The device exhibits a maximum on-resistance of 0.90 Ohms at VGS = 10 V. It supports a power dissipation of 300 W and operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Unclamped Inductive Switching (UIS) rated for rugged operation
• Low package inductance design facilitates easy driving and protection
• Fast intrinsic rectifier diode with low reverse recovery time
• Rugged polysilicon gate cell structure

Single FETs, MOSFETs Applications

• DC-DC converters
• Synchronous rectification
• Switched-mode and resonant-mode power supplies
• AC motor control
• Battery chargers

Single FETs, MOSFETs Procurement Notes

Verify the specific part number against official manufacturer documentation to confirm technical specifications and compliance status. Ensure that the procurement channel provides valid traceability and authenticity guarantees. Cross-reference datasheet revisions to ensure compatibility with current design requirements. Confirm thermal management solutions align with the specified power dissipation limits.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring robust inductive switching capabilities. The TO-268 package offers a balance of high power density and surface-mount convenience. Consider the 0.90 Ohm on-resistance for conduction loss calculations. Evaluate the fast intrinsic diode characteristics for synchronous rectification efficiency. Ensure adequate heatsinking to maintain junction temperatures within the specified operational range.

Single FETs, MOSFETs Part Context

This device belongs to the HiPerFET family of N-Channel Enhancement Mode MOSFETs. It utilizes HDMOSTM process technology to achieve low on-resistance. The series includes variants such as IXFT10N100 and IXFT12N100, differentiated primarily by their current handling and on-resistance values while sharing similar voltage ratings and package styles.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes within the same family include IXFT10N100 and IXFT12N100. Verify pinout compatibility and thermal resistance when replacing with other manufacturers' 1000V TO-268 MOSFETs. Ensure equivalent UIS ratings and gate charge characteristics are met for circuit stability.