IXFT13N80Q

Single FETs, MOSFETs Overview

The IXFT13N80Q is a single N-channel enhancement mode Power MOSFET from the HyperFET series, manufactured by IXYS. It utilizes silicon technology and is housed in a TO-268-3 (D2PAK) surface-mount package. The device features an 800 V drain-source breakdown voltage and supports a continuous drain current of 13 A. Its maximum on-resistance is specified at 700 mOhms. The component operates within a temperature range of -55 °C to +150 °C, with a power dissipation rating of 250 W.

Single FETs, MOSFETs Feature Summary

• Integrated fast intrinsic rectifier for efficient switching applications
• HyperFET technology optimized for low conduction losses
• Enhanced avalanche ruggedness for robust operation

Single FETs, MOSFETs Applications

• High-frequency power supplies
• Motor control circuits
• DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the NRND status before integration, as this indicates the component is not recommended for new designs. Confirm lead times and availability through authorized distributors, as stock levels may be limited. Ensure that the TO-268-3 package footprint matches the target PCB layout requirements for proper thermal and electrical performance.

Single FETs, MOSFETs Selection Notes

Select this component when an 800 V rating and approximately 13 A current capacity are required in a surface-mount form factor. Compare the 700 mOhm on-resistance against system efficiency targets. Consider the thermal management capabilities of the TO-268-3 package relative to the 250 W dissipation limit under expected operating conditions.

Single FETs, MOSFETs Part Context

This part belongs to the IXYS HyperFET family, which focuses on high-voltage power switching solutions. The IXFT13N80Q represents a specific configuration within the IXFT series, designed for applications requiring reliable high-voltage performance in compact surface-mount packages.

Single FETs, MOSFETs Replacement Considerations

Check for direct substitutes within the IXFT13N80P or similar IXYS HyperFET variants. Verify pin compatibility and electrical parameter alignment before swapping components in existing designs.