IXTQ32N65X

Single FETs, MOSFETs Overview

The IXTQ32N65X is a single N-Channel enhancement mode Power MOSFET from the IXYS HiPerFET X-Class series. It utilizes silicon technology and is housed in a TO-3P-3 through-hole package. Key electrical parameters include a drain-source breakdown voltage (Vds) of 650 V, a continuous drain current (Id) of 32 A, and a maximum gate-source voltage (Vgs) of ±30 V. The device features a typical on-resistance (Rds On) of 135 mΩ at 10 V gate drive. Additional specifications include a gate charge (Qg) of 54 nC, a power dissipation (Pd) of 500 W, and an operating temperature range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• High-voltage capability with 650 V drain-source breakdown rating for robust operation in demanding environments.
• Low on-resistance design to minimize conduction losses and improve overall system efficiency.
• Avalanche-rated construction to withstand energy stress during switching transitions.

Single FETs, MOSFETs Applications

• High-frequency switch-mode power supplies
• Motor control applications
• DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly with the manufacturer or authorized distributors before finalizing procurement. Confirm that the TO-3P-3 package dimensions match your thermal management and PCB layout requirements. Ensure that the gate drive circuitry supports the specified threshold and charge characteristics for optimal switching performance.

Single FETs, MOSFETs Selection Notes

Select this component when a high-voltage, high-current silicon MOSFET is required for through-hole mounting. The 650 V rating suits general-purpose industrial and consumer power applications. Consider the 135 mΩ on-resistance and 500 W power dissipation capabilities against your thermal constraints. Verify compatibility with standard logic-level or dedicated gate drivers given the 30 V maximum gate-source voltage limit.

Single FETs, MOSFETs Part Context

This part belongs to the IXYS HiPerFET X-Class series, which focuses on high-performance power switching solutions. The TO-3P-3 package provides a rugged mechanical structure suitable for direct heatsink mounting. As a silicon-based N-Channel MOSFET, it offers a balance of cost-effectiveness and performance for medium-to-high power applications compared to wider bandgap alternatives.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other IXYS HiPerFET X-Class devices sharing the TO-3P-3 package and similar voltage/current ratings. Verify pinout compatibility and thermal resistance values when substituting with equivalent parts from other manufacturers offering 650 V N-Channel MOSFETs in through-hole configurations.