IXTV270N055T2

Single FETs, MOSFETs Overview

The IXTV270N055T2 is a TrenchT2 N-channel power MOSFET manufactured by IXYS. It features a 55 V drain-source voltage rating and supports a continuous drain current of 270 A at case temperature. The device utilizes silicon technology in a PLUS220 surface-mount package. Key electrical parameters include a maximum on-resistance of 4.8 mΩ, a gate charge of 160 nC, and a power dissipation capacity of 530 W. The component operates within a junction temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• Utilizes TrenchT2 technology for low conduction losses
• Designed for high-current switching applications
• Features robust avalanche capability

Single FETs, MOSFETs Applications

• DC-DC converters
• Motor control systems
• Power supply units

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and thermal characteristics before integration. Confirm that the PLUS220 footprint matches the target PCB design. Ensure adequate heatsinking is provided to maintain junction temperatures within the specified operational limits during high-load conditions.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high current handling with low on-resistance in a compact SMD form factor. Compare against standard TO-220 variants if through-hole mounting is preferred. Evaluate thermal resistance values to ensure the system can dissipate the rated power effectively under worst-case operating scenarios.

Single FETs, MOSFETs Part Context

This part belongs to the IXYS TrenchT2 portfolio, which focuses on optimizing the balance between conduction and switching losses. The PLUS220 package offers improved thermal performance compared to traditional TO-220 packages while maintaining a small footprint suitable for dense board layouts.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible alternatives within the same voltage and current class. Verify that any substitute maintains similar Rds(on) and Qg specifications to preserve circuit efficiency and drive requirements.