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JAN1N5712UBCA is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE ARRAY SCHOTTKY 16V 75MA UB. Review the specifications below when checking this part for your BOM.
Diode Arrays specifications for JAN1N5712UBCA
- Description：DIODE ARRAY SCHOTTKY 16V 75MA UB
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Diode Configuration：1 Pair Common Anode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：16 V
- Current - Average Rectified (Io) (per Diode)：75mA
- Voltage - Forward (Vf) (Max) @ If：1 V @ 35 mA
- Speed：Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：150 nA @ 16 V
- Operating Temperature - Junction：150°C (Max)
- Mounting Type：Surface Mount
- Package / Case：4-SMD, No Lead
- Supplier Device Package：UB
- Grade：Military
- Qualification：MIL-PRF-19500/444
Diode Arrays datasheet and documents for JAN1N5712UBCA
Diode Arrays Overview
The JAN1N5712UBCA is a Schottky barrier diode manufactured by Microchip Technology. It features a maximum repetitive peak reverse voltage of 20 V and an average forward rectified current of 75 mA. The device exhibits a maximum DC reverse leakage current of 150 nA at 16 V and a typical junction capacitance of 2 pF at 0 V reverse bias and 1 MHz frequency. The forward voltage drop is specified as 1 V at a forward current of 35 mA. It operates within a junction temperature range of -65°C to +150°C.
Diode Arrays Feature Summary
- Ceramic surface mount construction designed for high-reliability applications
- Qualified per MIL-PRF-19500/444 standards for military use
- Unidirectional polarity configuration
Diode Arrays Applications
- High-reliability military electronic systems
- Spacecraft power management circuits
- Avionics signal processing components
Diode Arrays Procurement Notes
Verify the specific qualification level (JAN, JANTX, JANTXV) required for your application against the ordering information. Confirm that the ceramic package type matches the mechanical constraints of the target assembly. Ensure compliance with relevant military specifications during the sourcing process.
Diode Arrays Selection Notes
Select this component when a hermetically sealed, military-grade Schottky diode is required for harsh environments. Consider the 20 V rating and 75 mA current capacity relative to circuit demands. Evaluate the surface mount footprint compatibility against the printed circuit board design guidelines.
Diode Arrays Part Context
This part belongs to the 1N571x series of small-signal Schottky barrier diodes. It serves as the surface mount equivalent to the axial-leaded JEDEC registered 1N5712 number. The series offers various polarities including common cathode and common anode options in ceramic packages.
Diode Arrays Replacement Considerations
The 1N5712UBCA is the surface mount equivalent of the 1N5712. Verify pinout compatibility and thermal characteristics before substituting axial-leaded variants.
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