Diode Arrays JAN1N5712UBD/TR product image

JAN1N5712UBD/TR

$62.21
  • Description:DIODE ARRAY SCHOTTKY 16V 75MA UB
  • Series:-

SKU:8ccad25ae940 Category: Brand:

  
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JAN1N5712UBD/TR is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE ARRAY SCHOTTKY 16V 75MA UB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for JAN1N5712UBD/TR

  • Description:DIODE ARRAY SCHOTTKY 16V 75MA UB
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tape & Reel (TR)
  • Diode Configuration:1 Pair Series Connection
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):16 V
  • Current - Average Rectified (Io) (per Diode):75mA
  • Voltage - Forward (Vf) (Max) @ If:1 V @ 35 mA
  • Speed:Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:150 nA @ 16 V
  • Operating Temperature - Junction:-65°C ~ 150°C
  • Mounting Type:Surface Mount
  • Package / Case:3-SMD, No Lead
  • Supplier Device Package:UB
  • Grade:Military
  • Qualification:MIL-PRF-19500/444

Diode Arrays datasheet and documents for JAN1N5712UBD/TR

JAN1N5712UBD/TR

Diode Arrays Overview

The JAN1N5712UBD/TR is a ceramic surface mount Schottky barrier diode qualified to MIL-PRF-19500/444 standards. It features a maximum average rectified output current of 75 mA and a working peak reverse voltage of 16 V. The device operates within a junction temperature range of -65 °C to +150 °C, with a thermal resistance from junction to solder pad of 100 °C/W. Electrical characteristics include a maximum forward voltage of 1.0 V at 35 mA and a maximum reverse leakage current of 150 nA at 16 V.

Diode Arrays Feature Summary

  • Ceramic encased construction for high-reliability military applications
  • Surface mount equivalent of JEDEC registered 1N5712 numbers
  • Low reverse leakage characteristics

Diode Arrays Applications

  • High-reliability military systems
  • UHF/VHF detection circuits
  • Pulse application environments

Diode Arrays Procurement Notes

Verify the specific suffix 'D' indicates the Doubler polarity configuration as defined in the part nomenclature. Confirm that the component meets the required JAN reliability level per MIL-PRF-19500/444 specifications before integration into final assemblies.

Diode Arrays Selection Notes

Select this component when a low-profile ceramic surface mount package is required for space-constrained designs. Ensure the circuit design accommodates the 16 V working peak reverse voltage limit and the 75 mA average rectified output current rating under specified thermal conditions.

Diode Arrays Part Context

This component belongs to the 1N5711UB and 1N5712UB series of Schottky barrier diodes manufactured by Microchip Technology. The series offers various polarities including common anode, common cathode, and doubler configurations, providing flexibility for different circuit topologies while maintaining military-grade qualification standards.

Diode Arrays Replacement Considerations

Direct replacements include other JAN-level 1N5712 variants such as JANTX1N5712UBD/TR or JANTXV1N5712UBD/TR, provided the higher reliability levels are acceptable. Verify polarity compatibility (Doubler) and package dimensions against existing board layouts.

Diode Arrays FAQ

What does the 'D' suffix indicate in the part number?

The 'D' suffix denotes the Doubler polarity configuration for the 1N5712UB series.

Is the JAN1N5712UBD/TR RoHS compliant?

Yes, the datasheet states that the device is RoHS compliant by design.

What is the maximum operating junction temperature?

The maximum operating junction temperature is +150 °C.

JAN1N5712UBD/TRJAN1N5712UBD/TR
$62.21
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