JAN1N5712UBD

Diode Arrays Overview

The JAN1N5712UBD is a small-signal Schottky barrier diode manufactured by Microchip Technology. It features a ceramic surface-mount UB package and is qualified to MIL-PRF-19500/444 standards for high-reliability applications. The device operates with a maximum repetitive reverse voltage of 16 V and an average forward current of 35 mA. Key electrical parameters include a maximum forward voltage of 1 V at 35 mA and a maximum reverse leakage current of 150 nA at 16 V. The junction capacitance is specified as 2 pF at 0 V and 1 MHz. The component supports a wide operating temperature range from -65°C to +150°C.

Diode Arrays Feature Summary

• Ceramic encapsulation designed for military-grade reliability and harsh environment performance
• Surface-mount UB package configuration providing a compact footprint equivalent to axial-leaded variants
• Schottky barrier technology enabling low forward voltage drop and fast switching characteristics

Diode Arrays Applications

• High-reliability aerospace and defense electronic systems
• Military-grade rectification circuits requiring strict qualification standards
• Low-voltage signal detection and mixing applications in rugged environments

Diode Arrays Procurement Notes

Verify the specific JAN qualification level against project requirements, as this part number denotes a specific military tier within the MIL-PRF-19500/444 spectrum. Confirm that the UB surface-mount package aligns with the intended PCB layout, distinguishing it from the axial-leaded DO-35 versions. Ensure compliance with relevant export control classifications and environmental directives applicable to military components before finalizing procurement.

Diode Arrays Selection Notes

Select the JAN1N5712UBD when a surface-mount solution is required for applications demanding MIL-PRF-19500/444 JAN qualification. This component serves as the SMD equivalent to the 1N5712 series, offering identical electrical performance in a ceramic package. Consider this option over commercial variants when long-term stability and radiation hardness are critical design constraints.

Diode Arrays Part Context

This component belongs to the 1N5711UB and 1N5712UB family of Schottky barrier diodes produced by Microchip Technology. The family includes various qualification levels such as JANTX and JANTXV, alongside commercial options. All variants share the same fundamental silicon die and electrical specifications, differing primarily in testing rigor, traceability, and packaging materials to meet specific reliability standards.

Diode Arrays Replacement Considerations

The 1N5712UBD/TR is a compatible surface-mount variant within the same product family. For through-hole requirements, the 1N5712-1 serves as the direct axial-leaded alternative. Verify that substitute parts maintain the required JAN military qualification level if strict adherence to MIL-PRF-19500/444 is necessary.