Diode Arrays JAN1N6642UBD product image

JAN1N6642UBD

$17.64
  • Description:DIODE ARRAY GP 75V 300MA UB
  • Series:-

SKU:3f2e550e5aad Category: Brand:

  
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JAN1N6642UBD is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE ARRAY GP 75V 300MA UB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for JAN1N6642UBD

  • Description:DIODE ARRAY GP 75V 300MA UB
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Diode Configuration:1 Pair Series Connection
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):75 V
  • Current - Average Rectified (Io) (per Diode):300mA
  • Voltage - Forward (Vf) (Max) @ If:1.2 V @ 100 mA
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):5 ns
  • Current - Reverse Leakage @ Vr:500 nA @ 75 V
  • Operating Temperature - Junction:-65°C ~ 175°C
  • Mounting Type:Surface Mount
  • Package / Case:3-SMD, No Lead
  • Supplier Device Package:UB
  • Grade:Military
  • Qualification:MIL-PRF-19500/578

Diode Arrays datasheet and documents for JAN1N6642UBD

JAN1N6642UBD

Diode Arrays Overview

The JAN1N6642UBD is a high-reliability small-signal switching diode manufactured by Microchip Technology. It features a single configuration in a three-pin ceramic surface-mount package (D-5D-2). Key electrical parameters include a peak reverse voltage of 75 V, an average forward current of 100 mA, and a maximum surge current of 2.5 A. The device exhibits a fast recovery time of 5 ns, with a forward voltage of 1.2 V and a reverse current of 500 nA. It operates within a temperature range of -65°C to +175°C and has a maximum diode capacitance of 5 pF.

Diode Arrays Feature Summary

  • High-temperature operation capability up to 175°C for demanding environments
  • Fast switching performance with 5 ns recovery time
  • Radiation-hardened construction suitable for military and aerospace applications

Diode Arrays Applications

  • Military avionics systems
  • Spacecraft signal processing circuits
  • High-reliability computer diode applications

Diode Arrays Procurement Notes

Verify the specific ordering suffix and manufacturer lot code upon receipt to ensure compliance with defense procurement standards. Confirm that the component matches the JAN1N6642UBD designation exactly, as suffix variations may indicate different packaging or qualification levels. Request full traceability documentation and material certifications from the supplier to validate authenticity and adherence to original manufacturing specifications.

Diode Arrays Selection Notes

Select this component when radiation tolerance and extended temperature ranges are critical requirements. The ceramic package provides superior environmental stability compared to plastic alternatives. Ensure the circuit design accommodates the 75 V reverse voltage limit and 100 mA forward current constraints. Verify that the 5 ns recovery speed meets the system's switching frequency demands without introducing excessive delay.

Diode Arrays Part Context

This part belongs to the JAN series of high-reliability semiconductors produced by Microchip Technology, formerly Microsemi. The JAN prefix indicates compliance with strict military quality standards. It is distinct from commercial variants like the 1N6642 due to enhanced screening processes and radiation hardness verification. The UBD suffix specifically denotes the surface-mount ceramic package configuration.

Diode Arrays Replacement Considerations

  • JANTX1N6642UBD
  • JANTXV1N6642UBD

Diode Arrays FAQ

What is the maximum operating temperature for the JAN1N6642UBD?

The maximum operating temperature is +175°C.

Does the JAN1N6642UBD support surface-mount technology?

Yes, it is available in a surface-mount ceramic package designated as D-5D-2.

What is the typical reverse leakage current at rated conditions?

The maximum reverse current is specified as 500 nA.

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