JAN2N6032

Single Bipolar Transistors Overview

The JAN2N6032 is a high-power NPN silicon bipolar junction transistor manufactured by Microchip Technology. Designed for through-hole mounting in a TO-3 (TO-204AA-2) metal package, it supports a maximum collector-emitter voltage of 90 V and a collector-base voltage of 120 V. The device handles a continuous collector current of 50 A with a power dissipation rating of 140 W. It operates within an extended temperature range from -65°C to +200°C. DC current gain ranges from a minimum of 10 to a maximum of 50.

Single Bipolar Transistors Feature Summary

• Hermetically sealed metal construction suitable for harsh environments
• High current handling capability for power switching applications
• Extended thermal stability for high-temperature operation

Single Bipolar Transistors Applications

• Military and aerospace power control systems
• Industrial motor drive circuits
• High-reliability power amplification stages

Single Bipolar Transistors Procurement Notes

Verify the specific revision level and lot traceability documentation upon order confirmation. Ensure that the procurement channel provides valid military-grade certification papers consistent with JAN specifications. Confirm that the physical package matches the TO-3 standard dimensions required for your heat sink interface. Request detailed electrical test data sheets for the specific batch delivered to ensure compliance with the stated voltage and current limits.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring robust NPN power switching under extreme conditions. The TO-3 package facilitates direct mounting to chassis heatsinks for effective thermal management. Consider the 140 W power dissipation limit and ensure adequate cooling infrastructure is present. Verify that the system voltage does not exceed the 90 V collector-emitter rating during transient events.

Single Bipolar Transistors Part Context

This part belongs to the JAN series of discrete semiconductors produced by Microchip Technology. These components are engineered to meet stringent military reliability standards. The JAN2N6032 serves as a specialized power transistor variant within the broader portfolio of high-voltage bipolar devices offered by the manufacturer.

Single Bipolar Transistors Replacement Considerations

Consult official substitution lists for equivalent military-grade NPN power transistors in TO-3 packages. Verify pinout compatibility and thermal resistance characteristics before integrating alternative parts into existing designs.