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JANS1N5417US is listed in the Single Diodes range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE STANDARD 200V 3A B SQMELF. Review the specifications below when checking this part for your BOM.
The JANS1N5417US is a single fast recovery rectifier diode manufactured by Microchip Technology. It features a 200 V reverse voltage rating and a 3 A forward current capacity. The device utilizes a B-Package-2 (SQ-MELF) surface mount package. Key electrical parameters include a maximum forward voltage of 1.5 V, a reverse leakage current of 1 uA, and a reverse recovery time of 150 ns. It supports a maximum surge current of 80 A and operates within a temperature range of -65 °C to +175 °C.
Verify the specific JANS suffix indicates military-grade qualification requirements. Confirm the B-Package-2 footprint compatibility with your PCB layout. Ensure the supplier provides traceability documentation required for defense or aerospace procurement standards. Check for RoHS exemptions if applicable to your project constraints.
Select this component when radiation tolerance and hermetic sealing are mandatory. The 200 V rating suits low-voltage DC-DC converters. The 150 ns recovery time balances switching speed and EMI. Compare against JAN variants if space constraints allow through-hole mounting instead of surface mount.
This part belongs to the 1N54xx series of fast recovery rectifiers. The JANS prefix denotes a specific military qualification level distinct from commercial or standard industrial grades. It shares the core silicon die characteristics with other 1N5417 variants but differs in packaging and reliability testing protocols.
JANTXV1N5417US/TR offers similar electrical specifications with a tape-and-reel packaging option. JAN1N5417 provides comparable performance in a different hermetic package style. Verify pinout and thermal resistance equivalence before substitution.
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