JANSR2N3637L

Single Bipolar Transistors Overview

The JANSR2N3637L is a PNP silicon bipolar junction transistor (BJT) manufactured by Microchip Technology. It features a TO-5AA metal can package with three bottom pins. Key electrical ratings include a maximum collector-emitter voltage of 175 V, a maximum collector-base voltage of 175 V, and an emitter-base voltage of 5 V. The device supports a continuous collector current of 1 A and has a power dissipation rating of 1 W at 25°C ambient temperature. It operates within a temperature range of -55°C to +125°C.

Single Bipolar Transistors Feature Summary

• Qualified under MIL-PRF-19500/357 for high-reliability applications
• Constructed in a hermetically sealed TO-5AA metal case
• Designed for radiation-hardened environments

Single Bipolar Transistors Applications

• Military aerospace systems
• Spacecraft electronics
• High-reliability industrial control

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'SR' indicates space-grade qualification. Confirm that the manufacturer documentation explicitly lists MIL-PRF-19500/357 compliance. Ensure the TO-5AA pinout matches the design requirements. Check for lot traceability records required for defense contracts.

Single Bipolar Transistors Selection Notes

Select this component when radiation tolerance and long-term reliability are critical. Compare against standard commercial variants if environmental constraints allow. Verify thermal management capabilities for the 1 W dissipation limit. Ensure the PNP configuration fits the circuit topology.

Single Bipolar Transistors Part Context

This part belongs to the 2N3637 family of low-power PNP transistors. The 'JANSR' prefix denotes a specific space-grade version produced by Microchip. It shares core electrical characteristics with the commercial 2N3637 but undergoes stricter manufacturing controls.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the JAN2N3637L or JANTX2N3637L for military use. Commercial equivalents like the ON Semiconductor 2N3637L may be used if radiation hardening is not required.