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JANTX2N3749 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS NPN 80V 5A TO-111. Review the specifications below when checking this part for your BOM.
The JANTX2N3749 is a military-grade NPN power bipolar junction transistor manufactured by Microchip Technology. It utilizes silicon technology and is housed in a TO-111 through-hole package. The device is rated for a maximum collector-emitter voltage of 80 V, a maximum collector-base voltage of 110 V, and an emitter-base voltage of 8 V. It supports a maximum DC collector current of 2 A with a power dissipation capacity of 5 W. The component operates within a temperature range from -65 °C to +200 °C.
Verify the specific revision level and lot traceability documentation upon order confirmation. Ensure that the procurement channel provides valid military qualification certificates. Confirm that the physical marking matches the official datasheet specifications to prevent counterfeit introduction into the supply chain.
Select this component when a standard commercial BJT lacks the necessary radiation tolerance or extended temperature range. Compare the 80 V rating against circuit requirements to ensure adequate headroom. Consider the TO-111 package constraints for thermal management and board space allocation during the design phase.
This part belongs to the 2N3749 family of power transistors produced under military specifications. It serves as a ruggedized alternative to commercial variants, offering enhanced durability against extreme conditions. The manufacturer maintains specific quality controls for this line to meet defense industry standards.
Direct substitutes include the 2N3749 commercial grade or other MIL-spec equivalents such as the 2N3749A if tighter gain parameters are required. Verify pinout compatibility and thermal resistance characteristics before substitution.
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