JANTX2N5153

Single Bipolar Transistors Overview

The JANTX2N5153 is a radiation-hardened PNP silicon power transistor manufactured by Microchip Technology. It utilizes a TO-39 metal can package designed for through-hole mounting. The device supports a maximum continuous collector current of 2 A and withstands a collector-emitter breakdown voltage of 80 V. Key electrical ratings include a collector-base voltage of 100 V, an emitter-base voltage of 5.5 V, and a total power dissipation of 1 W. It operates within a junction temperature range of -65°C to +200°C.

Single Bipolar Transistors Feature Summary

• Radiation hardened design qualified per MIL-PRF-19500/545 standards
• High thermal stability with extended operating temperature range up to 200°C
• Robust single PNP configuration in a hermetically sealed metal can

Single Bipolar Transistors Applications

• Military aerospace systems requiring radiation tolerance
• High-reliability power switching circuits
• Harsh environment amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix designation against official Microchip documentation to confirm radiation hardness levels and testing criteria. Ensure that the procurement channel provides valid traceability records consistent with military specifications. Confirm package integrity and pinout alignment before integration into critical circuit designs.

Single Bipolar Transistors Selection Notes

Select this component when high radiation tolerance and wide temperature operation are required. Compare the 80 V collector-emitter rating and 2 A current capacity against circuit demands. Verify compatibility with TO-39 mounting constraints and ensure thermal management strategies support the 1 W power dissipation limit under worst-case conditions.

Single Bipolar Transistors Part Context

This part belongs to the 2N515x series of radiation-hardened PNP power transistors produced by Microchip Technology. The series includes variants such as 2N5151, 2N5153, and their low-power or ultra-high-reliability counterparts. These devices are engineered for demanding applications where standard commercial semiconductors would fail due to ionizing radiation exposure or extreme thermal stress.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided data.