Diode Arrays JANTXV1N5711UBD product image

JANTXV1N5711UBD

$88.83
  • Description:DIODE ARRAY SCHOTTKY 50V 33MA UB
  • Series:-

SKU:08016ae369b4 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

JANTXV1N5711UBD is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE ARRAY SCHOTTKY 50V 33MA UB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for JANTXV1N5711UBD

  • Description:DIODE ARRAY SCHOTTKY 50V 33MA UB
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Diode Configuration:1 Pair Series Connection
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):50 V
  • Current - Average Rectified (Io) (per Diode):33mA
  • Voltage - Forward (Vf) (Max) @ If:1 V @ 15 mA
  • Speed:Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:200 nA @ 50 V
  • Operating Temperature - Junction:-65°C ~ 150°C
  • Mounting Type:Surface Mount
  • Package / Case:4-SMD, No Lead
  • Supplier Device Package:UB
  • Grade:Military
  • Qualification:MIL-PRF-19500/444

Diode Arrays datasheet and documents for JANTXV1N5711UBD

JANTXV1N5711UBD

Diode Arrays Overview

The JANTXV1N5711UBD is a Schottky barrier diode manufactured by Microchip Technology. It features a ceramic surface-mount package designated as UB (3-SMD, No Lead). The device is qualified to MIL-PRF-19500/444 standards at the JANTXV level for high-reliability applications. Key electrical parameters include a maximum repetitive reverse voltage of 50 V and an average forward current of 33 mA DC. The junction temperature range spans from -65°C to +150°C.

Diode Arrays Feature Summary

  • Ceramic encapsulation provides robust protection suitable for demanding environments.
  • Military qualification ensures compliance with strict reliability standards.
  • Low forward voltage drop supports efficient signal rectification.

Diode Arrays Applications

  • High-reliability military electronic systems
  • Spacecraft power management circuits
  • Avionics signal detection modules

Diode Arrays Procurement Notes

Verify the specific suffix configuration against the official Microchip datasheet to ensure the correct military grade and package variant. Confirm that the procurement channel accepts non-RoHS compliant items, as this component series may not meet standard commercial environmental directives. Validate the supplier's authorization status for handling military-grade semiconductors.

Diode Arrays Selection Notes

Select this component when a hermetically sealed surface-mount Schottky diode is required for extreme temperature operation. The UB package offers a compact footprint compared to axial leads while maintaining high thermal stability. Ensure the circuit design accommodates the 50 V reverse voltage rating and 33 mA current limit within the specified junction temperature range.

Diode Arrays Part Context

This part belongs to the 1N5711 family of Schottky barrier diodes. It serves as the surface-mount equivalent to the traditional DO-35 axial-leaded 1N5711 number. The family includes various qualification levels such as JAN, JANTX, JANTXV, and JANS, all compliant with MIL-PRF-19500/444.

Diode Arrays Replacement Considerations

The 1N5711UB is the direct axial-leaded equivalent. Surface-mount alternatives within the same qualification level should be cross-checked for pinout compatibility and thermal resistance characteristics.

JANTXV1N5711UBDJANTXV1N5711UBD
$88.83
Buy Now

Recent News