Diode Arrays JANTXV1N5712UBD/TR product image

JANTXV1N5712UBD/TR

$87.54
  • Description:DIODE ARRAY SCHOTTKY 16V 75MA UB
  • Series:-

SKU:e8fb5be4d2f6 Category: Brand:

  
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JANTXV1N5712UBD/TR is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE ARRAY SCHOTTKY 16V 75MA UB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for JANTXV1N5712UBD/TR

  • Description:DIODE ARRAY SCHOTTKY 16V 75MA UB
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tape & Reel (TR)
  • Diode Configuration:1 Pair Series Connection
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):16 V
  • Current - Average Rectified (Io) (per Diode):75mA
  • Voltage - Forward (Vf) (Max) @ If:1 V @ 35 mA
  • Speed:Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:150 nA @ 16 V
  • Operating Temperature - Junction:-65°C ~ 150°C
  • Mounting Type:Surface Mount
  • Package / Case:3-SMD, No Lead
  • Supplier Device Package:UB
  • Grade:Military
  • Qualification:MIL-PRF-19500/444

Diode Arrays datasheet and documents for JANTXV1N5712UBD/TR

JANTXV1N5712UBD/TR

Diode Arrays Overview

The JANTXV1N5712UBD/TR is a silicon Schottky barrier diode manufactured by Microchip Technology. It features a dual configuration within the UB-4 surface-mount package. The device supports a maximum repetitive reverse voltage of 16 V and a forward current of 35 mA. Forward voltage is specified at 1 V, with a reverse leakage current of 150 nA. Operating temperatures range from -65°C to +150°C. This component complies with MIL-PRF-19500/444 standards for high-reliability applications.

Diode Arrays Feature Summary

  • Military-grade qualification per MIL-PRF-19500/444 for high-reliability environments
  • Dual configuration in a compact ceramic surface-mount package
  • Low forward voltage drop characteristic typical of Schottky technology

Diode Arrays Applications

  • High-reliability aerospace systems
  • Military-grade signal processing circuits
  • Spacecraft power management modules

Diode Arrays Procurement Notes

Verify the specific suffix 'JANTXV' against official Microchip documentation to confirm the exact reliability level and testing requirements. Ensure the UB-4 package type matches the PCB footprint design. Confirm RoHS status as military variants may differ from commercial specifications. Validate that the dual configuration aligns with circuit topology needs before procurement.

Diode Arrays Selection Notes

Select this component when dual Schottky diodes are required in a small surface-mount form factor for military or aerospace applications. The JANTXV designation indicates enhanced screening compared to standard JAN levels. Consider the 16 V reverse voltage rating and 35 mA forward current limits during circuit design. Verify thermal management capabilities given the wide operating temperature range.

Diode Arrays Part Context

This part belongs to the 1N5712UB family of Schottky barrier diodes. It serves as the surface-mount equivalent of traditional axial-leaded 1N5712 diodes. The series offers various configurations including common anode and common cathode options. Microchip provides multiple qualification levels within this family to meet different reliability standards.

Diode Arrays Replacement Considerations

Direct substitutes include other JANTXV1N5712 variants with compatible packages. Cross-reference with 1N5712UBD parts from qualified manufacturers. Verify pinout compatibility for dual configurations. Ensure replacement parts meet the same MIL-PRF-19500/444 qualification requirements.

JANTXV1N5712UBD/TRJANTXV1N5712UBD/TR
$87.54
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