JANTXV2N5153P

Single Bipolar Transistors Overview

The JANTXV2N5153P is a PNP silicon power transistor manufactured by Microchip Technology, designed for high-speed switching applications. It operates within a collector-emitter voltage (VCEO) of 80 V and a collector-base voltage (VCBO) of 100 V, with an emitter-base voltage (VEBO) rating of 5.5 V. The device supports a maximum DC collector current of 2 A and dissipates up to 1 W of power. It functions reliably across a temperature range from -65°C to +200°C. The component utilizes a TO-39 metal can package and meets the rigorous requirements of MIL-PRF-19500/545K.

Single Bipolar Transistors Feature Summary

• Radiation hardness assurance provided for specific levels under MIL-PRF-19500/545K
• High thermal stability enabling operation at junction temperatures up to 200°C
• Robust construction in a hermetically sealed metal can package

Single Bipolar Transistors Applications

• High-speed power switching circuits
• Military aerospace electronic systems
• Harsh environment industrial control units

Single Bipolar Transistors Procurement Notes

Verify the specific radiation hardness level required for your application against the manufacturer's official datasheet, as the JANTXV series encompasses multiple radiation grades. Confirm that the TO-39 package configuration matches your board layout constraints. Ensure compliance with all relevant military specifications before finalizing procurement decisions.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high-voltage PNP switching capabilities in extreme thermal conditions. Consider the 2 A current limit and 1 W power dissipation when calculating heat management strategies. Verify that the radiation tolerance aligns with the operational environment standards defined in the applicable military specification.

Single Bipolar Transistors Part Context

This part belongs to the 2N5153 family of PNP silicon power transistors produced under MIL-PRF-19500/545K. The JANTXV suffix indicates a specific quality and radiation hardness grade within the broader military-grade transistor lineup. These devices are engineered for reliability in demanding environments where standard commercial components would fail.

Single Bipolar Transistors Replacement Considerations

Consult the official datasheet for verified substitute part numbers within the same radiation hardness category. Cross-reference electrical parameters such as VCEO, IC, and package type to ensure compatibility.