KSA1298PYWD

Single Bipolar Transistors Overview

The KSA1298PYWD is a PNP epitaxial silicon transistor manufactured by onsemi, designed for low-frequency power amplifier applications. It operates within a collector-emitter voltage of -25 V and supports a continuous collector current of -800 mA. The device features a DC current gain ranging from 40 to 320 at specified test conditions and achieves a transition frequency of 120 MHz. Packaged in an SOT-23 (TO-236) surface-mount configuration, it offers a maximum power dissipation of 200 mW and a junction temperature rating up to 150 °C.

Single Bipolar Transistors Feature Summary

• Designed specifically for low-frequency power amplifier circuits
• Provides high DC current gain suitable for amplification tasks
• Features ultra-low saturation voltage for efficient switching or linear operation

Single Bipolar Transistors Applications

• Low-frequency power amplifier stages
• Complementary pairing with NPN transistors such as the KSC3265
• General-purpose signal amplification in consumer electronics

Single Bipolar Transistors Procurement Notes

Verify the exact pinout configuration required for your specific PCB layout, as SOT-23 packages may vary between manufacturers regarding Base, Emitter, and Collector assignments. Confirm that the ordering suffix PYWD corresponds to the standard tape and reel specifications provided in the official documentation before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with moderate current handling capabilities and high gain is required for low-frequency applications. Ensure the design accommodates the 200 mW power dissipation limit and verify thermal management strategies are adequate for the intended operating environment and duty cycle.

Single Bipolar Transistors Part Context

This part belongs to the KSA1298 series of PNP epitaxial transistors. It serves as the complementary counterpart to the NPN KSC3265 transistor, facilitating push-pull or differential amplifier configurations. The series is characterized by its reliability in small-signal and low-power amplification roles within compact electronic designs.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the KSC3265 as the complementary device. When sourcing replacements, ensure the substitute matches the -25 V VCEO rating, -800 mA IC capability, and SOT-23 package dimensions to maintain circuit integrity.