KSC1675COBU

Single Bipolar Transistors Overview

The KSC1675COBU is an NPN epitaxial silicon RF bipolar transistor manufactured by onsemi. It operates at a frequency of 300 MHz with a maximum collector-emitter voltage (VCEO) of 30 V and an emitter-base voltage (VEBO) of 5 V. The device supports a continuous collector current of 50 mA and dissipates up to 250 mW of power. It features a minimum DC current gain (hFE) of 120 and functions within a temperature range of -55°C to +150°C. The component utilizes a TO-92-3 through-hole package.

Single Bipolar Transistors Feature Summary

• Epitaxial silicon construction for stable RF performance
• High DC current gain suitable for amplification applications
• Through-hole mounting configuration for standard PCB integration

Single Bipolar Transistors Applications

• RF signal amplification circuits
• General-purpose switching applications
• Low-power amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'COBU' against official datasheets, as it may denote specific binning or packaging variations distinct from the base model. Confirm RoHS compliance status directly with the manufacturer documentation. Ensure the procurement channel provides valid traceability for discontinued or end-of-life components. Cross-reference the exact part number with authorized distributors to avoid counterfeit risks. Validate that the received units match the specified TO-92-3 package dimensions.

Single Bipolar Transistors Selection Notes

Select this component when a low-voltage NPN transistor with moderate current handling and high gain is required for RF or general-purpose use. Compare the 30 V VCEO rating against circuit requirements to ensure adequate headroom. Consider the 50 mA collector current limit for load compatibility. Evaluate the thermal dissipation capabilities relative to the operating environment. Verify that the TO-92-3 package fits the available board space and assembly constraints.

Single Bipolar Transistors Part Context

This component belongs to the family of NPN bipolar junction transistors produced by onsemi. It shares the TO-92-3 form factor with other low-power discrete devices in the catalog. The product line focuses on silicon-based solutions for consumer and industrial electronics. Similar parts in the series offer varying voltage and current ratings while maintaining comparable package styles.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source data.