Single Bipolar Transistors KSC2310RBU product image

KSC2310RBU

$0.03
  • Description:TRANS NPN 150V 0.05A TO-92-3
  • Series:-

SKU:c6d40880359a Category: Brand:

  
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KSC2310RBU is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 150V 0.05A TO-92-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for KSC2310RBU

  • Description:TRANS NPN 150V 0.05A TO-92-3
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):50 mA
  • Voltage - Collector Emitter Breakdown (Max):150 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 10mA, 5V
  • Power - Max:800 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body
  • Supplier Device Package:TO-92-3

Single Bipolar Transistors datasheet and documents for KSC2310RBU

KSC2310RBU

Single Bipolar Transistors Overview

The KSC2310RBU is an NPN epitaxial silicon transistor housed in a TO-92L package. It features a collector-base voltage of 200 V and a collector-emitter voltage of 150 V. The device supports a maximum collector current of 50 mA with a power dissipation rating of 800 mW at 25°C ambient temperature. Key electrical characteristics include a DC current gain (hFE) ranging from 40 to 240 depending on classification, a collector cut-off current of 0.1 µA, and a current gain bandwidth product of 100 MHz. The output capacitance is specified at 5 pF.

Single Bipolar Transistors Feature Summary

  • High voltage capability with a 200 V collector-base breakdown rating
  • Wide DC current gain range supporting various amplification requirements
  • High frequency performance with a 100 MHz current gain bandwidth product

Single Bipolar Transistors Applications

  • High voltage power amplifier circuits
  • General purpose switching applications
  • Audio signal processing stages

Single Bipolar Transistors Procurement Notes

Verify the manufacturer origin as Fairchild Semiconductor or its successors like onsemi. Confirm the specific hFE bin (R, O, or Y) required for your design, as gain varies significantly between classifications. Ensure the TO-92L package dimensions match your PCB footprint constraints before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when high voltage isolation is required alongside moderate current handling capabilities. The TO-92L package offers a compact form factor suitable for space-constrained designs. Consider the thermal derating curve if operating above 25°C ambient temperature to ensure the 800 mW limit is not exceeded.

Single Bipolar Transistors Part Context

This part belongs to the KSC2310 series of NPN epitaxial transistors designed for general-purpose high-voltage applications. The 'BU' suffix typically denotes a specific tape-and-reel packaging format used for automated assembly processes, distinguishing it from bulk-packaged variants.

Single Bipolar Transistors Replacement Considerations

KSC2330R is a compatible alternative offering higher voltage ratings up to 300 V while maintaining similar current and package specifications.

KSC2310RBUKSC2310RBU
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