KSC2881YTF

Single Bipolar Transistors Overview

The KSC2881YTF is an NPN epitaxial silicon transistor designed for power amplifier applications. It features a collector-emitter voltage of 120V and a current gain bandwidth product of 120MHz. The device supports a collector current of 800mA with power dissipation ratings of 500mW or 1,000mW depending on mounting conditions. It operates within a junction temperature range up to 150°C and utilizes an SOT-89 package.

Single Bipolar Transistors Feature Summary

• NPN epitaxial silicon construction optimized for power amplification
• High breakdown voltage capability of 120V for robust operation
• Current gain bandwidth product of 120MHz for frequency performance
• Complementary pairing available with the KSA1201 PNP transistor

Single Bipolar Transistors Applications

• Power amplifier circuits
• General purpose amplification
• RF signal processing stages

Single Bipolar Transistors Procurement Notes

Verify the specific 'O' hFE grade classification (80–160) required for your design against the datasheet specifications. Confirm the SOT-89 package dimensions match your PCB footprint constraints. Ensure thermal management strategies account for the specified power dissipation limits when mounted on ceramic boards versus standard substrates.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high voltage handling and moderate frequency response in a compact surface-mount form factor. Consider the complementary KSA1201 if push-pull configurations are necessary. Evaluate thermal requirements carefully, as power dissipation varies significantly based on the mounting substrate material and area.

Single Bipolar Transistors Part Context

Manufactured by Fairchild Semiconductor, now part of onsemi, the KSC2881 belongs to a family of general-purpose NPN transistors. It serves as a complement to the KSA1201 PNP device, facilitating balanced circuit designs. The SOT-89 package provides a balance between power handling and size for consumer and industrial electronics.

Single Bipolar Transistors Replacement Considerations

• KSC2881U3HZG

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage?

The maximum collector-emitter voltage (VCEO) is 120V.

What is the current gain bandwidth product?

The current gain bandwidth product (fT) is 120MHz.

Is there a complementary PNP transistor?

Yes, the KSA1201 is the designated complementary PNP transistor.