KSC5047TU

Single Bipolar Transistors Overview

The KSC5047TU is an NPN epitaxial silicon transistor manufactured by Fairchild Semiconductor, designed for high-current switching applications. It features a collector-emitter voltage rating of 50 V and a continuous collector current capability of 15 A. The device provides a DC current gain of at least 40 when tested at 5 A. Electrical characteristics include a maximum collector-emitter saturation voltage of 0.5 V and a base-emitter saturation voltage of 1.2 V under specified load conditions. Thermal management allows for a collector dissipation of 100 W at a case temperature of 25°C, with a maximum junction temperature of 150°C.

Single Bipolar Transistors Feature Summary

• High current gain performance
• Low collector-emitter saturation voltage

Single Bipolar Transistors Applications

• General-purpose power switching circuits
• Audio amplifier output stages
• Motor control interfaces

Single Bipolar Transistors Procurement Notes

Verify the manufacturer origin, as the component was originally produced by Fairchild Semiconductor. Confirm that the TO-3P1 package dimensions match your board layout requirements. Ensure thermal interface materials are compatible with the metal tab design to maintain the rated 100 W dissipation capability. Check for RoHS compliance status if required by your manufacturing standards.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring robust NPN switching with a 50 V collector-emitter breakdown voltage. The 15 A current rating makes it suitable for driving moderate loads directly. Consider the TO-3P1 package for its mechanical stability and ease of heat sinking compared to smaller surface-mount alternatives in high-power scenarios.

Single Bipolar Transistors Part Context

This part belongs to the family of NPN epitaxial silicon transistors intended for power electronics. It utilizes a TO-3P1 package, which facilitates direct mounting to heatsinks for efficient thermal dissipation. The device is characterized for operation across a wide temperature range, supporting industrial and consumer electronic applications.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference lists from semiconductor distributors or manufacturers for verified equivalent parts. Ensure any substitute maintains the same voltage, current, and thermal ratings.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter saturation voltage?

The maximum collector-emitter saturation voltage is 0.5 V when the collector current is 5 A and the base current is 0.12 A.

How does the device handle thermal stress?

The transistor supports a collector dissipation of 100 W at a case temperature of 25°C and can operate with a junction temperature up to 150°C.