KSD526O

Single Bipolar Transistors Overview

The KSD526O is an NPN epitaxial silicon transistor manufactured by onsemi, housed in a TO-220-3LD (CASE 340AT) through-hole package. It supports a maximum collector current of 4 A and withstands collector-emitter and collector-base voltages of 80 V each. The device dissipates up to 30 W at 25°C case temperature with a junction temperature limit of 150°C. Electrical characteristics include a DC current gain ranging from 40 to 240 depending on the classification, a transition frequency of 3 to 8 MHz, and a collector-emitter saturation voltage of 0.45 V typical.

Single Bipolar Transistors Feature Summary

• Complements the KSB596 PNP transistor for push-pull configurations
• Constructed using NPN epitaxial silicon technology
• Designed as a lead-free compliant device

Single Bipolar Transistors Applications

• Power amplifier applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging type and compliance status. Confirm availability and lifecycle status directly with onsemi or authorized distributors, as component supply conditions may change without notice. Ensure the selected variant matches the required pinout and thermal management specifications for the intended circuit design.

Single Bipolar Transistors Selection Notes

Select this component for high-current switching or linear amplification tasks requiring robust power handling. Evaluate the hFE classification requirements against the application's gain needs. Ensure adequate heatsinking is provided to maintain the case temperature within limits for optimal 30 W dissipation performance.

Single Bipolar Transistors Part Context

This part belongs to the KSD526 series of NPN power transistors. It serves as the complementary counterpart to the KSB596 PNP transistor, facilitating balanced designs in output stages. The device utilizes a standard TO-220-3LD mechanical outline suitable for board mounting and heat sink attachment.

Single Bipolar Transistors Replacement Considerations

The KSB596 is documented as the complementary device. Verify electrical parameters such as breakdown voltage and current ratings when sourcing alternative NPN transistors from other manufacturers.