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Product Detailed Parameters
- Description:IC GATE DRVR HIGH-SIDE 8DIP
- Series:-
- Mfr:Analog Devices Inc.
- Package:Tube
- Driven Configuration:High-Side
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:9V ~ 24V
- Logic Voltage - VIL, VIH:0.8V, 2V
- Current - Peak Output (Source, Sink):-
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):-
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Through Hole
- Package / Case:8-DIP (0.300", 7.62mm)
- Supplier Device Package:8-PDIP
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):-
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Overview
The LTC1255IN8#PBF is a dual high-side MOSFET gate driver manufactured by Analog Devices Inc. It operates within a supply voltage range of 9 V to 24 V and supports input voltages up to 30 V. The device features two drivers with two outputs, delivering an output current of 23 uA. It has a maximum dead time of 60 us and consumes 600 uA of operating supply current. The output voltage is 10.5 V. It functions in temperatures from 0°C to +70°C and is housed in a PDIP-8 package.
Feature Summary
- Dual high-side configuration for driving external MOSFETs
- Integrated dead-time control to prevent shoot-through
- Supports wide input voltage ranges up to 30 V
Applications
- High-side switching in power management circuits
- Motor control applications requiring isolated drive signals
- Industrial power conversion systems
Procurement Notes
Verify the specific suffix IN8 against official Analog Devices documentation to confirm the PDIP-8 through-hole package variant. Ensure the operating temperature range meets system requirements as this part is rated for commercial temperatures (0°C to +70°C). Cross-reference the manufacturer part number directly with the datasheet to avoid confusion with other package options or industrial grade variants.
Selection Notes
Select this component when a dual high-side driver is required for synchronous rectification or half-bridge topologies. The PDIP-8 package suits prototyping or low-volume through-hole designs. Verify that the 23 uA output current is sufficient for the target MOSFET gate capacitance at the desired switching frequency. Consider thermal dissipation if multiple units are used in close proximity.
Part Context
This part belongs to the LTC1255 series of gate drivers designed for high-side N-channel MOSFET applications. It provides a cost-effective solution for driving loads where the source terminal is not ground-referenced. The series typically includes variants with different packages and temperature ratings to suit various industrial and consumer electronics needs.
Replacement Considerations
Check for direct pin-compatible alternatives such as the LTC1255CN8#PBF for commercial temperature range in DIP-8. Verify functional equivalence regarding output current and dead-time specifications before substitution.
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