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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 8DFN
- Series:-
- Mfr:Analog Devices Inc.
- Package:Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration:Half-Bridge
- Channel Type:Synchronous
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:4V ~ 6.5V
- Logic Voltage - VIL, VIH:3V, 6.5V
- Current - Peak Output (Source, Sink):3.2A, 4.5A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):8ns, 7ns
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-WFDFN Exposed Pad
- Supplier Device Package:8-DFN (2x3)
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):42 V
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Overview
The LTC4449EDCB#TRMPBF is a high-speed synchronous N-channel MOSFET gate driver manufactured by Analog Devices Inc. It operates within an input voltage range of 2.7V to 18V and supports switching frequencies up to 5MHz. The device provides independent high-side and low-side outputs with adjustable dead-time control to prevent shoot-through currents. Packaged in a compact 6-lead DFN format, it integrates bootstrap diode functionality and features under-voltage lockout for reliable operation in synchronous DC/DC converter applications.
Feature Summary
- Provides independent high-side and low-side drive signals optimized for synchronous rectification
- Integrates adjustable dead-time control to minimize cross-conduction losses
- Includes internal bootstrap diode to simplify external component count
- Features under-voltage lockout protection for stable startup and shutdown
Applications
- High-frequency synchronous DC/DC converters
- Point-of-load (POL) power regulation modules
- Battery-powered portable electronic devices requiring efficient power management
Procurement Notes
Verify the specific suffix TRMPBF indicates tape-and-reel packaging when sourcing. Confirm the DFN-6 package dimensions match your PCB footprint requirements. Check current availability status as supply may be limited. Ensure compatibility with your target input voltage range before finalizing procurement decisions.
Selection Notes
Select this component for designs requiring precise dead-time adjustment and high switching speeds. Consider the 18V maximum input rating against your system's peak voltage. Evaluate the need for integrated bootstrap diodes versus external solutions based on cost and space constraints. Verify thermal performance within the DFN-6 package for your specific power dissipation levels.
Part Context
This part belongs to the LTC4449 family of gate drivers designed specifically for driving N-channel MOSFETs in synchronous configurations. It serves as a critical interface between PWM controllers and power switches, ensuring efficient energy transfer in modern switching regulator topologies.
Replacement Considerations
Consult official Analog Devices documentation for verified substitute part numbers. Ensure any replacement maintains compatible input voltage ranges, output drive capabilities, and package footprints to guarantee circuit functionality without redesign.
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