Diode Arrays LXA16T600C product image

LXA16T600C

$1.43
  • Description:DIODE ARR SCHOTT 600V 8A TO220AB
  • Series:Qspeed™

SKU:52ba35f55fdf Category: Brand:

  
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LXA16T600C is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Power Integrations. Its product description is DIODE ARR SCHOTT 600V 8A TO220AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for LXA16T600C

  • Description:DIODE ARR SCHOTT 600V 8A TO220AB
  • Series:Qspeed™
  • Mfr:Power Integrations
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):600 V
  • Current - Average Rectified (Io) (per Diode):8A
  • Voltage - Forward (Vf) (Max) @ If:2.94 V @ 8 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):21.5 ns
  • Current - Reverse Leakage @ Vr:250 µA @ 600 V
  • Operating Temperature - Junction:150°C (Max)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220AB
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for LXA16T600C

LXA16T600C

Diode Arrays Overview

The LXA16T600C is a Qspeed™ X-Series common-cathode diode rated for 600 V peak repetitive reverse voltage. It features an average forward current of 8 A per diode and 16 A per device, with a maximum junction temperature of 150 °C. The component exhibits low reverse recovery charge (QRR) of 82 nC at 125 °C and softness (tb/ta) of 0.55. Packaged in TO-220AB, it supports high dIF/dt capabilities up to 1000 A/µs.

Diode Arrays Feature Summary

  • Low reverse recovery charge (QRR), low reverse recovery current (IRRM), and short reverse recovery time (tRR)
  • High dIF/dt capability supporting switching rates up to 1000 A/µs
  • Soft recovery waveform characteristics

Diode Arrays Applications

  • Power Factor Correction (PFC) Boost Diode
  • Motor drive circuits
  • DC-AC inverters

Diode Arrays Procurement Notes

Verify the specific ordering suffix 'C' against official Power Integrations documentation to confirm package type and packing quantity details. Ensure compliance with RoHS standards and halogen-free requirements as specified in the datasheet before finalizing procurement specifications.

Diode Arrays Selection Notes

Select this component for applications requiring extremely fast switching speeds and reduced EMI filter sizes. The low QRR and soft recovery characteristics enable snubber elimination and increased system efficiency. Verify thermal management requirements based on the 83 W power dissipation rating at 25 °C case temperature.

Diode Arrays Part Context

This part belongs to the Qspeed™ family of advanced silicon diodes from Power Integrations. It is designed to replace Silicon Carbide (SiC) diodes for efficient performance in high-frequency applications while maintaining cost-effectiveness. The X-Series designation indicates optimized reverse recovery characteristics.

Diode Arrays Replacement Considerations

LXA16T600

Diode Arrays FAQ

What is the typical reverse recovery charge (QRR) at 125 °C?

The typical reverse recovery charge (QRR) at 125 °C is 82 nC.

Is the LXA16T600C suitable for eliminating snubber circuits?

Yes, its low QRR and soft recovery characteristics are designed to eliminate the need for snubber circuits.

What is the maximum non-repetitive peak surge current for a ½ cycle sinusoid at 25 °C?

The maximum non-repetitive peak surge current is 350 A for a ½ cycle of t = 28 μs sinusoid at TC = 25 °C.

LXA16T600CLXA16T600C
$1.43
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