LXP1002-23-2

RF Diode Overview

The LXP1002-23-2 is a silicon PIN diode manufactured by Microchip Technology, designed for surface-mount applications. It features a non-hermetic plastic SMT package and operates within a temperature range of -55°C to +125°C. Key electrical specifications include a maximum peak reverse voltage of 50V and a maximum forward current of 100 mA. The device dissipates up to 250 mW of power. Capacitance is specified at 0.32 pF at 50V and 1 MHz, while resistance is 4 ohms at 100 mA and 100 MHz.

RF Diode Feature Summary

• Utilizes silicon PIN technology for RF switching applications
• Designed for surface-mount installation in compact circuits
• Operates reliably across extended industrial temperature ranges

RF Diode Applications

• RF signal switching
• Attenuator circuits
• Phase shifting networks

RF Diode Procurement Notes

Verify the specific ordering suffix against official Microchip documentation to ensure correct packaging and variant selection. Confirm RoHS compliance status through the manufacturer's latest product change notifications or datasheet revisions prior to procurement.

RF Diode Selection Notes

Select this component based on its 50V reverse voltage rating and 250 mW power dissipation capabilities. Ensure the SOT-23-3 footprint matches the PCB layout requirements. Verify that the capacitance and resistance values meet the specific RF circuit design constraints.

RF Diode Part Context

This part belongs to the LXP1002 series of RF PIN diodes from Microchip Technology. The series offers various configurations tailored for different RF switching needs. The LXP1002-23-2 specifically denotes a single pair configuration in a standard SOT-23-3 package.

RF Diode Replacement Considerations

Consult the official Microchip LXP1000-LXP1011 datasheet for direct cross-reference information. Verify pinout compatibility and electrical parameter equivalence before substituting with other manufacturers' components.