MADP-047668-1441BN

RF Diode Overview

The MADP-047668-1441BN is a dual-pair anti-parallel low magnetic PIN diode manufactured by MACOM Technology Solutions. Designed as a passive switch element, it utilizes silicon PIN diodes in an anti-parallel configuration to facilitate efficient RF power handling. Key electrical parameters include a breakdown voltage of 75 V (measured at IR = 10 µA) and a forward voltage specified at IF = 100 mA. The device features a low Tau characteristic, optimizing switching performance for high-frequency applications.

RF Diode Feature Summary

• Employs a dual-pair anti-parallel PIN diode configuration for enhanced RF power handling capabilities
• Engineered with low Tau characteristics to support efficient switching operations
• Utilizes silicon technology to provide robust passive switching functionality

RF Diode Applications

• RF power switching circuits
• High-frequency signal routing systems
• Passive switch elements in communication infrastructure

RF Diode Procurement Notes

Verify the specific suffix '1441BN' against official MACOM documentation to confirm exact mechanical dimensions and lead finish specifications. Ensure that the required breakdown voltage and forward current ratings align with the target circuit design constraints before finalizing procurement orders.

RF Diode Selection Notes

Select this component when a low magnetic profile and efficient RF power handling are required in a passive switching application. The anti-parallel configuration offers distinct advantages over single-diode setups for bidirectional signal control. Evaluate the 75 V breakdown limit to ensure compatibility with the maximum expected reverse bias conditions in the system.

RF Diode Part Context

This part belongs to the MADP-047668-x series of dual-pair anti-parallel low magnetic PIN diodes from MACOM. These components are engineered for high-performance analog and RF applications, providing reliable switching solutions within MACOM's portfolio of discrete semiconductor devices designed for demanding signal integrity requirements.

RF Diode Replacement Considerations

Consult official MACOM substitution guides for verified alternatives within the MADP-047668-x family. Cross-reference pinout configurations and thermal characteristics to ensure functional equivalence without modifying the existing PCB layout or circuit topology.

RF Diode FAQ

What is the test condition for the breakdown voltage specification?

The breakdown voltage of 75 V is measured under a reverse current (IR) condition of 10 µA.

How is the forward voltage defined for this device?

The forward voltage parameter is specified at a forward current (IF) of 100 mA.